BCV62 Search Results

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

3Kp Transistor

Abstract: BCV61 BCV62 BCV62A BCV62B BCV62C 3LP Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jun 18 1999 Apr 08 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max. 100 mA

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

3Kp Transistor

Abstract: 3lp Transistor marking 3KP 3KP MARKING MARKING code 3lp
Contextual Info: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1

q 143 transistor

Abstract: BCV62B M.H. Transistor 3LP Transistor
Contextual Info: BCV62; 62A BCV62B; 62C SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic package, designed for use in applications where the working point must be independent of temperature. Owing to application of two similar crystals of one slice this device has a good thermal coupling and

TRANSISTOR SMD MARKING CODE ad

Abstract: BCM62B MARKING SMD PNP TRANSISTOR BV BCM61B BCV62 MARKING CODE SMD IC
Contextual Info: BCM62B PNP/PNP matched double transistor Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device SMD plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B

e2 marking

Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

BCV62A

Abstract: BCV62 BCV62B H12E 1pb t2 BCV62C BFP181 transistor marking E2 transistor marking T2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking 3ks

Abstract: transistor marking c1
Contextual Info: BCV62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching 3 2 • High current gain 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BCV62 PNP general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP general purpose double transistor

TRANSISTOR SMD MARKING CODE 3x

Abstract: TRANSISTOR SMD MARKING CODE ad BCM61B BCM62B BCV62 transistor TR1 TRANSISTOR SMD MARKING CODE ad npn bcm61 Matched Transistor PNP
Contextual Info: BCM62B PNP/PNP matched double transistor Rev. 01 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device SMD plastic package. Matched version of BCV62.

3Kp Transistor

Abstract: BCV62A two transistor forward BCV61 BCV62 BCV62B BCV62C 3LP Transistor
Contextual Info: fc.bS3T31 002M547 GEb H A P X N AUER PHILIPS/DISCRETE BCV62; 62A BCV62B; 62C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

Contextual Info: BCV62C Transistors Building Block Transistor Array Number of Devices1 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.420

Contextual Info: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

Contextual Info: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1

TRANSISTOR SMD MARKING CODE 3L

Abstract: BCV62A smd transistor bcv62 BCV61 BCV61A BCV61B BCV61C BCV62 BCV62B BCV62C
Contextual Info: BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device SMD plastic package. Table 1. Product overview

Contextual Info: BCV62 Transistors Building Block Transistor Array Number of Devices1 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.125

Contextual Info: BCV62B Transistors Building Block Transistor Array Number of Devices1 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.220

Contextual Info: BCV62A Transistors Building Block Transistor Array Number of Devices1 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.125

ALG TRANSISTOR

Contextual Info: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.

BCV62B

Abstract: marking 3ks BCV62 BCV62A BCV62C VPS05178
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

Contextual Info: BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device SMD plastic package. Table 1. Product overview