BC860W Search Results
BC860W Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BC860W | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | 123.23KB | 2 | ||
| BC860W | Infineon Technologies | NPN Silicon AF Transistors | Original | 235.16KB | 8 | ||
| BC860W | Infineon Technologies | PNP Silicon AF Transistors | Original | 132.25KB | 8 | ||
| BC860W | Kexin | PNP General Purpose Transistor | Original | 47.72KB | 2 | ||
| BC860W | NXP Semiconductors | PNP general purpose transistors | Original | 64.46KB | 7 | ||
| BC860W | Philips Semiconductors | PNP General Purpose Transistor | Original | 50.47KB | 8 | ||
| BC860W | Philips Semiconductors | PNP General Purpose Transistor | Original | 82.19KB | 3 | ||
| BC860W | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||
| BC860W | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||
| BC860W | Siemens | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | Original | 279.54KB | 8 | ||
| BC860W | TY Semiconductor | PNP General Purpose Transistor - SOT-323 | Original | 128.28KB | 2 | ||
| BC860WT/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 42.64KB | 1 |
BC860W Price and Stock
Infineon Technologies AG BC860W H6327 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC860W H6327 | 3,000 |
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Nexperia BC860W-TSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC860W-T | 9,346 |
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Nexperia BC860WSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC860W | 8,638 |
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Nexperia BC860W/T3Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC860W/T3 | 2,876 |
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Nexperia BC860WT/RSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC860WT/R | 2,399 |
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BC860W Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage |
Original |
bc859wbc860wbc859bwbc860bw+2 | |
str 6707
Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
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Original |
m3d187bc859wbc860wot323+14 | |
1bs sot323
Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
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Original |
bc846wbc850wbc856wbc857w+10 | |
BC846W
Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
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Original |
bc856wbc860wbc846wbc847w+8 | |
MARKING CODE 21E SOT323
Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
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Original |
bc846wbc850wbc856wbc857w+12 | |
BC8488
Abstract: H12E BC848 equivalent 1bs sot323
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Original |
bc846wbc850wbc856wbc857w+10 | |
BC856BW
Abstract: BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wot-323bc857wbc858w+6 | |
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Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP |
Original |
bc846wbc850wbc856wbc857w+6 | |
1bs sot323
Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
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Original |
bc846wbc850wbc856wbc857w+9 | |
BC856CW
Abstract: BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
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Contextual Info: BC856W.BC860W PNP Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN |
Original |
bc856wbc860wbc846wbc847w+6 | |
MARKING CODE 21E SOT323
Abstract: sot323 marking code A.C BC8488
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Original |
bc846wbc850wbc856wbc857w+9 | |
MARKING SMD 4G
Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
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Original |
kc860wbc860wkc860bwkc860cw+3 | |
transistor marking 4D
Abstract: BC859BW BC859CW BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S
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OCR Scan |
d0544fl4bc859wbc860wot323+8 | |
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BC856CW
Abstract: BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wbc860wot-323bc857w+7 | |
BC856CW
Abstract: BC856BW BC860AW BC856AW BC856W BC857W BC858W BC859W BC860BW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
BC856BW
Abstract: BC860BW BC856AW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES |
Original |
m3d187bc859wbc860wot323+3 | |
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Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors FEATURES BC859W; BC860W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and |
OCR Scan |
bc859wbc860wot323bc849w+4 | |
marking code 4DContextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors |
OCR Scan |
bc859wbc860wbc850w115002/00/04/pp8+1 | |
4d SMD Transistor
Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
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Original |
bc859wbc860wbc859bwbc860bw+12 | |
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Contextual Info: b b S B ' m 0054484 015 * A P X Philips Semiconductors PNP general purpose transistor BC859W; BC860W AUER PHILIPS/DISCRETE FEATURES Product specification b?E PIN CONFIGURATION • S- mini package. • Low noise JEL?_EL 1 c DESCRIPTION PNP transistor in a plastic SOT323 |
OCR Scan |
bc859wbc860wot323mbb018+4 | |
marking 4d npnContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC859W; BC860W |
Original |
m3d187bc859wbc860wot323+5 | |
BC856AW
Abstract: BC856BW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
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Original |
bc856wbc860wbc857wbc858w+6 | |