BC635 PH Search Results

BC639

Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
Contextual Info: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage

bc639

Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639

BC639 pin details

Abstract: BC639 application note BC639G BC639 BC639 18 transistor BC639 BC635 BC635RL1 BC63916 BC635ZL1
Contextual Info: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage

BC637

Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639

BC639 pin details

Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage

BC639RL1

Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC639 MOTOROLA

Abstract: transistors BC 293 BC635 BC637 BC639 BC635 MOTOROLA
Contextual Info: MOTOROLA Order this document by BC635/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 635 BC 637 BC 639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage

BC639

Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC635 TRANSISTOR E C B

Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification

63516

Abstract: 635-16 63916 Bc 649
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A

BC640

Abstract: BC635 BC635-16 BC636 BC637 BC637-16 BC638 BC639 BC639-10 BC639-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V).

BC639

Abstract: BC635 TRANSISTOR E C B
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> • bbS3R31 □QSTS'lb Ml? « A P X BC636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

bc639

Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

BC640

Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

siemens

Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
Contextual Info: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226

7Z104

Abstract: BC635 BC636 BC636-10 BC637 BC638 BC638-10 BC639 BC640 BC640-10
Contextual Info: BC636; BC638; BC640 PHILIPS INTERNA T IO NA L SbE » 711D Ö2L 0042QSÖ 013 BI P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - 2 ^ - 2 P'N P transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

transistor C635

Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
Contextual Info: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement

BC639 philips

Abstract: BC639 BC635-16 BC635 BC636 BC637 BC638 BC640 IEC134 d 2923
Contextual Info: BC635; BC637; BC639 PHILIPS INTERNA TI O NA L 5bE D 7 11002b 00*45052 bTS « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - Z ° l- 2 3 N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.

bc639

Abstract: bc640 transistor BC637 complement BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639-10
Contextual Info: T> m N AUER PHILIPS/DISCRETE ^53^31 □□EVS'ìD T?^ B A P X A BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages o f audio amplifiers. P-N-P complements are BC636, BC638 and BC640.

BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Contextual Info: Philips Semiconductors Small-signal Transistors and Diodes Cross Reference Transistors PHILIPS GA TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER COMPETITOR TYPE NUMBER PHILIPS-TYPE-No. PHILIPS-TYPE-No. 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774

bc140 TO92

Abstract: 2N4033 BC638-10 BC141 equivalent bc368 equivalent BC369 NPN "Small-signal Transistors Selection" BC64010 BSV16 BSV17-10
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 25 >25 100 – 156 NPN

bc368 equivalent

Abstract: BFY50 equivalent 2N1711 Data Sheet BC140 equivalent TO-92 equivalent transistor 2N1711 BC638 BC635-16 Package TO 39 DATASHEET BFY51
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE MEDIUM-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 60 toff max. (ns) – PNP

bc638

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.