AS7C35 Search Results

Contextual Info: Advance information •■ AS7C3512K16P AS7C3512K18P Il II 3.3V 512K- 16 ‘18 pipeline burst synchronous SRAM Features • • • • • • • • • Organization: 5 2 4 ,2 8 8 w ord s x 16 or 18 bits Fast clock speeds to 166 MHz in LVTTL/LVCMOS Fast clock to data access: 3 . 5 / 3 . 8 / 4 / 5 ns

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: March 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

AS7C1026

Abstract: AS7C3513 AS7C4098 AS7C513 13-10TC
Contextual Info: AS7C513 AS7C3513 A 1 5V/3.3V 32Kx 16 CMOS SRAM Features • O rg an izatio n : 3 2 ,7 6 8 w o rd s X 16 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns ad d ress access tim e - 5 / 6 / 8 / 1 0 ns o u tp u t en ab le access tim e • Low p o w e r c o n su m p tio n

6846

Abstract: AS7C3513 AS7C3513-12 AS7C513 AS7C513-12 oh140
Contextual Info: 2&72% 5#4<<<# $6:&846 $6:&6846 8926169#65.ð49#&026#65$0 # HDWXUHV • Low power consumption: STANDBY - 28 mW (AS7C513) / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

Contextual Info: AS7C513 AS7C3513 5V/3.3V 32Kx 16 CMOS SRAM Features • O i g a n i z a t b n : 3 2 ,7 68 w o i r is x 1 6 b i t s • TTL -com p a t b i e , t h ie e - s t a i e 1/0 • H ig h g p e a d • 4 4 - p i n ÆDEC s ta n d a id p a c k a g e - 1 0 / 1 2 /1 5 / 2 0 n s a d d ie s s access tin e

AS7C3512L15PC

Contextual Info: H igh Perform ance •■ AS7C3512 64KX8 3.3V II AS7C35 12L CMOS SRAM Low voltage 64K x8 CMOS SRAM Preliminary information Features • O rg a n iz a tio n : 6 5 ,5 3 6 w o r d s x 8 b its • E qual access a n d cycle tim e s • S in gle 3 .3 ± 0 .3 V p o w e r su p p ly

AS7C3513C

Contextual Info: September 2006 Advance Information AS7C3513C 3.3 V 32K X 16 CMOS SRAM Features • Industrial -40o to 85oC temperature • Organization: 32,768 words x 16 bits • Center power and ground pins for low noise • High speed - 10 ns address access time

Contextual Info: June 2001 Preliminary Information AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

AS7C3513B

Abstract: AS7C3513B-10JC AS7C3513B-10JCN AS7C3513B-10JI
Contextual Info: March 2004 AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

Contextual Info: March 2004 AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

Contextual Info: Advance information •■ I l AS7C3512K16Z AS7C3512K18Z A 3.3V 5 1 2K x 1 6 /1 8 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • • • • • • • • • • Organization: 524,288 words x 16 or 18 bits ZBT architecture for efficient bus operation

Contextual Info: A Advance information •■ I l AS7C3512K16Z AS7C3512K18Z 3.3V 512Kx 16/18 synchronous burst SRAM with ZBT' Features • ZZ sleep m ode for lower power • Organization: 5 2 4 ,2 8 8 words x 16 or 18 bits • ZBT architecture for efficient bus operation

AS7C3512-15PC

Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

AS7C3512-20JC

Abstract: AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 Low voltage 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • High speed - 20/25 ns address access time - 5/6 ns output enable access time • Very low power consumption

Contextual Info: H igh Perform ance 32K X16 CMOS SRAM AS7C513 AS7C3513 3 2 K x 16 CMOS SRAM Advance information • Organization: 32,768 w ords x 16 bits • High speed - 1 2 /1 5 /2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low pow er consumption

CAW-18

Abstract: megatron
Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

AIA4M

Abstract: VW99
Contextual Info: Advance informatio AS7C3512K16Z AS7C3512K18Z •3V 5 1 2 K x l 6 / 1 8 synchronous burst SRAM with ZBT Features • • • • • • • • • • ZZ sleep mode for lower power Byte write enables Single R/ W control pin Gock enable for operation hold

256KX16

Abstract: 64KX16 AS7C1026 AS7C3513 AS7C4098 AS7C513 cm540
Contextual Info: H igh P erform an ce 3 2 K x 16 C M O S SRAM « H AS7C513 AS7C3513 A 3 2 K x 1 6 CM OS SRAM Features • O r g a n iz a t io n : 3 2 , 7 6 8 w o r d s x 1 6 b its • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss t im e

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM • • • • • • AS7C513 5V version AS7C3513 (3.3V version) Industrial and commercial temperature Organization: 32,768 words × 16 bits Center power and ground pins High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • Low power consumption: STANDBY - 28 mW AS7C513 / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: May 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

Contextual Info: AS7C513 AS7C3513 5V /3.3V 32Kx 16 CMOS SRAM Features • Organization: 3 2 ,7 6 8 w ords X 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 504 mW m ax 20 ns cycle