AS004M Search Results

AS004M2-11

Abstract: AS004M2
Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–4 GHz AS004M2-11 Features -11 • Low DC Power Consumption ORIENTATION MARK ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package 0.180 4.57 mm SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC SPST FET Switch iSAIphi Non-Reflective DC-6 GHz AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption

Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-4 GHz EHAlpha AS004M2-11 -11 Features • Low DC Power Consumption ORIENTATION , M A R K - -0 .1 8 0 4 .5 7 mm SQ. MAX. ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package 0.150 (3.81 mm)

AS004M1-11

Contextual Info: GaAs IC SPST Switch Non-Reflective DC–4 GHz AS004M1-11 Features -11 • Low DC Power Consumption ORIENTATION MARK ■ High Isolation, Non-Reflective Input and Output ■ 8 Lead Hermetic Surface Mount Package 0.180 (4.57 mm) SQ. MAX. 0.150 (3.81 mm) ■ Capable of Meeting MIL-STD

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC-4 GHz ESAlpha AS004M2-11 -11 F eat ur e s • Low DC Power Consumption ORIENTATION , M A R K - -0 .1 8 0 4.57 mm SQ . MAX. ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package 0.150 (3.81 mm)

Contextual Info: GaAs IC SPST Switch Non-Reflective DC-4 GHz ESAlpha AS004M 1-11 -11 F eat ur e s • Low DC Power Consumption ORIENTATION , M A R K - ■ High Isolation, Non-Reflective Input and Output 0.150 (3.81 mm) -0 .1 8 0 (4.57 mm) SQ . MAX. Jl ■ 8 Lead Hermetic Surface Mount Package

Contextual Info: GaAs MMIC SPDT FET Switch EBAlpha Non-Reflective DC-6 GHz AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features • Broadband D C -6 G H z ■ N on-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability AS004M 2-11

Contextual Info: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz A S 0 06 M 1-0 1, A S 0 0 6 M 1-10, AS004M 1-08, AS004M 1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption

Contextual Info: GaAs 1C SPST Switch Non-Reflective DC-4 GHz EBAlpha AS004M1-11 •11 Features ■ Low DC Power Consumption ORIENTATION . MARK-_ ■ High Isolation, Non-Reflective Input and Output -0.160 (4.57 mm) SQ. MAX. i 0.150 (3.81 mm) ■ 8 Lead Hermetic Surface Mount Package

Contextual Info: ESAlpha GaAs IC SPST Switch Non-Reflective DC-4 GHz AS004M 1-11 •11 Features ■ Low DC Power Consumption ORIENTATION , M A R K - ■ High Isolation, Non-Reflective Input and Output 0.150 (3.81 mm) -0 .1 8 0 (4.57 mm) SQ . MAX. Jl ■ 8 Lead Hermetic Surface Mount Package

Contextual Info: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz E£A$g|« AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AS117-45

Abstract: AD004T2-00 AK006R2-01
Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control