APT10M11B2VR Search Results
APT10M11B2VR Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT10M11B2VR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 64.99KB | 4 |
APT10M11B2VR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11B2VR O-247 APT10M1B2VR | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
Contextual Info: ADVANCED W 7Æ P o w e r Te c h n o l o g y A P T 10 M 1 1B 2 V R ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
O-247 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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Contextual Info: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, |
OCR Scan |
O-247 APT10M1B2VR |