APM3007N Search Results

APM3007N

Abstract: A102 J-STD-020A
Contextual Info: APM3007N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V / 80A , RDS ON = 5.5mΩ(typ.) @ VGS= 10V RDS(ON)= 8.5mΩ(typ.) @ VGS= 4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-220 , TO-252 and TO-263 Packages

Contextual Info: APM3007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/40A , RDS ON =5.5mΩ(typ.) @ VGS=10V RDS(ON)=8.5mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

A102

Abstract: APM3007N APM3007NU STD-020C
Contextual Info: APM3007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =5.5mΩ (typ.) @ VGS=10V RDS(ON)=8.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23