AOD413 Search Results

AOD4132

Contextual Info: AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.

AOD4136

Abstract: S734
Contextual Info: AOD4136 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal

AOD413

Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

AOD4130

Abstract: aod41
Contextual Info: AOD4130 60V N-Channel MOSFET General Description Product Summary VDS The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: Mar. 2005 AOD413, AOD413L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance

AOD413Y

Abstract: AOD413YL
Contextual Info: AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413Y uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

AOD413A

Abstract: 412ns 40v p-channel mosfet
Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

aod4130

Contextual Info: AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for

AOD413A

Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.

Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

AOD413A

Abstract: alpha omega to-252 P-Channel Field Effect Transistor AOD413A TO-252
Contextual Info: AOD413A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

AOD413A

Abstract: 40v p-channel mosfet
Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

AOD413L

Abstract: AOD413
Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD413A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413A/L uses advanced trench technology and design to provide excellent R DS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413Y uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD4136 N-Channel SDMOSTM POWER Transistor General Description Features TM The AOD4136 is fabricated with SDMOS trench technology that combines excellent RDS ON with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A