AN0140 Search Results

rs232 cross

Abstract: F64XX Z8F6403 Z8F64XX Z8F642
Contextual Info: Application Note EEPROM Emulation with a Z8 Encore! XP Flash MCU AN014005-0508 Abstract Discussion This application note provides a method for utilizing a s e g m e n t o f Z i l o g ’s Z 8 E n c o r e ! X P Microcontroller’s MCU’s Flash memory to emulate

EIGHT MOSFET ARRAY

Abstract: Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" 100 Volt mosfet schematic circuit AN0130NA p channel mosfet 100v AN0116 AN0116NA AN0120
Contextual Info: AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information * * † Order Number / Package BVDSS/ BVDGS min RDS(ON) (max) ID(ON) (min) IDSS* @ VDS = 100V Max IDSS* @ VDS = 250V Max 18-Lead Plastic DIP

Z8F64

Abstract: rs232 cross MCU FLASH Z8F6403 Z8F642
Contextual Info: Application Note EEPROM Emulation with the Z8 Encore! Flash MCU AN014002-1003 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com Application Note EEPROM Emulation with the Z8 Encore!® Flash MCU

Teledyne Semiconductor

Abstract: AN0110N AN0110NA AN0120N AN0120NA AN0130N AN0130NA AN0140N AN0140NA AN01-10
Contextual Info: 2ÖE D TELEDYNE COMPONENTS • öTlTbOE QQQtabT 7 WÊ î î S ' S ü * îg j“ H AN0130N, AN0140N SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION AN0110NA 100V,100Q 18 Pin Plastic DIP Description each channel AN0120NA

Contextual Info: TELEDYNE 2ÖE D C O MP O N E NT S • aT17t.02 QQQbaLT 7 _ ■ ANOllON, AN0120N AN0130N, AN0140N tÏT ,IC3H=üÆ\ 5 Z SEMICONDUCTOR N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS 7 ORDERING INFORMATION 18 Pin Plastic DIP DtscriptIon each channel AN0110NA

P-DIP18P

Abstract: VQ300IP v020 AN0130NA ANO120 VQ2004P VQ2006J VQ2006P VQ3001J VQ7254P
Contextual Info: - ft X t m VQ2004P VQ2006J VQ2006P VG3001J VQ3001P VQ7254J VQ7254P AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA AP0116NA AP0120NA AP0130NA AP0132NA AP014QNA TC0604WG TN0102N2 TNQ102N3 TM0102ND TN0mK2 TN0104N3 TN0104ND TN0106N2 TNQ1Q6N3 TN0106ND TN0110N2 TN0110N3

DIODE G7

Abstract: AN0116 10MVA AN0116NA AN0116ND AN0116WG AN0120 AN0120NA AN0140ND AN0130
Contextual Info: AN0116 AN0132 fi Supertexinc. AN0140 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package BVdss/ Plastic SOW-20* 25mA 1nA — AN0116NA AN0116WG AN0116ND 3000 25mA — —

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

Contextual Info: Advance 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

EIGHT MOSFET ARRAY DIP-18

Abstract: AN0116NA AN0116NB AN0116ND AN0116WG AN0120NA AN0120NB AN0130NA AN0130NB SOW-20
Contextual Info: SUPERTEX INC Dl D Ì 07735^5 DDQ17SÖ 0 f * AN01 8 Channel Power M O SFET Array Monolithic N-channel Enchancement Mode Ordering Information b v dss/ ^D SfO N ) min) 160V 200V 300V 320V 400V (max) 350Q 3000 300n 350n 350Q JI b v dqs <3>V’ d s. = 100V Max

AN0140N

Contextual Info: 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package B VDSS/ = 18-Lead Plastic Plastic DIP SOW-20* — AN0116NA AN0116WG — — AN0120NA — AN0120ND 25mA — — AN0130NA — AN0130ND 350ft 25mA — 350ÌÌ

dfb activation energy

Abstract: TR-NWT-000870 bookham modulator 10Gb CDR DFB laser drivers 86106B energy absorption of diode nrz optical modulator EML10ZCA EML11
Contextual Info: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

8 Channel Power Mosfet Array

Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
Contextual Info: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS

Contextual Info: Data Sheet 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

Diode BFM

Abstract: TR-NWT-000870 EML10WCA EML11 dfb activation energy nrz optical modulator
Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

dfb activation energy

Abstract: 10Gb CDR 5252 S diode 5817 specifications TR-NWT-000870 AN0140 EML10WCB EML11 GR-468 Diode BFM
Contextual Info: Data Sheet 10Gb/s DWDM EA Modulator and DFB Laser with GPO RF Connector EML10WCB The Bookham EML10WCB Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

Contextual Info: Preliminary 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the

corning phase modulator

Abstract: dfb activation energy
Contextual Info: Preliminary 10Gb/s EA Modulator and DFB Laser with GPO RF Connector EML10ZCA The Bookham EML10 Laser has an electro-absorption modulator monolithically integrated with a conventional Distributed Feedback Multi Quantum Well MQW laser. This allows the modulation voltage to be applied to the