AM100 Search Results

Contextual Info: DATA SHEET AM100~AM1010 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 30 Amperes peak

Contextual Info: ESAlpha DC/DC Converter AM100-73 F eat ur e s • Converts a Positive Voltage Into a Negative Voltage SOT-6 0 .0 7 4 r .-an 1 .9 0 m m R E F . i 1 PIN 6 - ■ Ideal for Providing Gate Voltage Bias for GaAs Products <- 0 .1 2 6 (3 .2 0 m m ) 0 .0 8 7 (2 .2 0 m m )

CD4024

Abstract: diagrams VW ecu 100474 LS000262
Contextual Info: Am100474 1 0 2 4 x 4 IMOX ECL Bipolar RAM Am100474 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • Fast access time 10 ns — improves system cycle speeds. Fully com patible with 100K series ECL logic — no board changes required. Enhanced output voltage level compensation providing

E111753

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board

Contextual Info: Am100474 1024 x 4 IMOX ECL Bipolar RAM Am100474 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • Fast access time 10 ns — improves system cycle speeds. Fully compatible with 100K series ECL logic — no board changes required. Enhanced output voltage level compensation providing

Contextual Info: ADV MICRO {t1EMORY> TL D E | 0257550 DDSbllB b | Am10 4 6 9 /Am100469 5 1 2 x 9 ËCL Tag Buffer Am10469/Am100469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast address to comparator output MISS Replaces six or mofe integrated circuits vyith a single

Contextual Info: Am100470 4096 x 1 IMOX ECL Bipolar RAM Fast access time 12 ns typ. — improves system cycle speeds Enhanced output voltage level compensation providing 6X (improvement in) V o l and V o h stability over supply and temperature ranges Internally voltage and temperature compensated provid­

AM152

Abstract: AM106 AM100 AM101 AM1010 AM102 AM104 AM108 AM150
Contextual Info: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board l Reliable construction utilizing molded plastic

diode bridge 60 Ampere 1000V

Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 E111753
Contextual Info: DATA SHEET AM100~AM1010 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes AM .370 9.4 .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES Unit: inch ( mm ) • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak

AM100-73

Abstract: vgen
Contextual Info: Preliminary DC/DC Converter AM100-73 Features SOT-6 • Converts a Positive Voltage Into a Negative Voltage 0.074 1.90 mm REF. 0.126 (3.20 mm) 0.087 (2.20 mm) PIN 6 ■ Ideal for Providing Gate Voltage Bias for GaAs Products 0.071 (1.80 mm) 0.052 (1.30 mm)

AM1000H

Abstract: AM1000 TO72 package Analog Switch 6 lead 40v mov AM1001H AM1002H AM1002 TO72 package n-channel jfet Analog FET Switch
Contextual Info: A M 1000. AM1001. A M 1 0 0 2 KIS Analog S w itches A M 1 0 0 0 ,A M 1 0 0 1 ,A M 1 0 0 2 silicon N -c h a n n e l high speed an alo g s w itc h g e n e ra l d e s c rip tio n T h e A M 1000 series are ju n ctio n F E T integrated cir­ High T oggle R ate

AM100MX-CU-R

Contextual Info: AM100MX-CU-R April 2010 Rev 7 High Power GaAs Power FET DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6GHz. The CU

KS000010

Contextual Info: Am100480 1 6 ,3 8 4 x 1 IMOX ECL Bipolar RAM _ PRELIMINARY_ Fast access tim e 15 ns — im proves system cycle speeds. Enhanced output voltage level com pensation providing 6 X (im provem ent in) V o l and V o h stability over supply

Contextual Info: Ami 0P14 / Am100P14/Am10KP14 4,096-Bit 1 0 2 4 x 4 ECL Bipolar PROM _ ADVANCE INFORMATION_ • • Fast A ccess tim e (8 ns typ.) — im proves system cycle tim es Power dissipation decreases with increasing tem perature

Contextual Info: '< -, Am10469/Am100469 * •/ A 512x9/ÉCL_ Tag Buffer ADVANCE INFORMATION > 3 DISTINCTIVE CHARACTERISTICS o • • • Fast address to com parator output MISS R eplaces six or more integrated circuits with a single device On-chip parity generator and checker

AM100-73

Contextual Info: Preliminary DC/DC Converter AM100-73 Features SOT-6 • Converts a Positive Voltage Into a Negative Voltage 0.074 1.90 mm REF. 0.126 (3.20 mm) 0.087 (2.20 mm) PIN 6 ■ Ideal for Providing Gate Voltage Bias for GaAs Products 0.071 (1.80 mm) 0.052 (1.30 mm)

Contextual Info: AM100MX-CU-R High Power GaAs Power FET August 2007 Rev. 5 DESCRIPTION AMCOM’s AM100MX-CU-R is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU-R is designed for high power microwave applications, operating up to 6 GHz. The CU

AM100MX-CU

Abstract: S21ANG
Contextual Info: AM100MX-CU High Power GaAs Power FET July 2003 Rev. 2 DESCRIPTION AMCOM’s AM100MX-CU is a part of the CU series of GaAs MESFETs. This part has a total gate width of 10mm. The AM100MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU

Contextual Info: Ami 0P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with increasing tempera­ ture • Internally voltage compensated providing flat AC perfor­

A715A

Abstract: 8AGD A523A
Contextual Info: Am10469/Am100469 5 1 2 x 9 ECL Tag Buffer Am 10469/Am 100469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast address to com parator output MISS R eplaces six or more integrated circuits with a single device On-chip parity generator and checker

AM100415

Contextual Info: Am100415 1024 x 1 IMOX II ECL Bipolar RAM DISTINCTIVE CHARACTERISTICS Fast access time 8 ns typ. — improves system cycle speeds Enhanced output voltage level compensation providing 6X (improvement in) Vo l and Vo h stability over supply and temperature ranges

Contextual Info: Am10P14 /Am100P14 /Am10KP14 4,096-Bit 1 0 2 4 x 4 ECL Bipolar PROM ADVANCE INFORMATION > 3 DISTINCTIVE CHARACTERISTICS Fast Access time (8 ns typ.) — improves system cycle times Power dissipation decreases with increasing tempera­ ture m*. Internally voltage compensated providing flat AC perfor­

AM152

Abstract: AM100-G AM101-G AM102-G AM104-G AM100
Contextual Info: Silicon Miniature Single-Phase Bridge AM100-G/150-G thru AM1010-G/1510-G Voltage: 50 ~ 1000 Volts Current: 1.0 ~ 1.5 Amp Features: .358 9.1 MAX AM Ratings to 1000V PRV Surge overloadrating - 30/50 amperes peak Ideal for printed circuited board .217 (5.5)

M9312

Abstract: MK1002P AM1002 MK1002L Am2810-Am1002P-Am1002
Contextual Info: ! Am2810 •Am1002P*Am1002k_ Dual 128-Bit Static Shift Register Distinctive Characteristics • 2nd Source to Mostek 1002Pand 1002L. • 1 0 0 % r e lia b ilit y a ssuran ce te s tin g in c o m p lia n c e w it h M IL STD-883. • B uilt-in pull-up resistors.