AAY28
Abstract: 60101-Y28 colour code diode
Contextual Info: AAY28 High-voltage germanium point-contact diode The high-vo ltag e germ anium diode A A Y 28 in the glass case 51 A 2 DIN 41 880 D O -7 for universal application has no lacquer coat and is marked by co u lo r rings. Starting at the cathode end, the co lo u r code runs as fo llo w s: brow n/gray/red/gray.
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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q60103-ths10to3530to4600+10iao5 sharpfree transistor equivalent book 2scsiemens transistor asy 27diode bay 61transistor bj 131-6tesla typ 202 thyristorteslaz1072hall effect 21ez1071
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k2485
Abstract: germanium Germaniumdiode MA6050 CD030
Contextual Info: Hochsperrende G erm anium -Spitzendiode A A Y 28 Die hochsperrende Germaniumdiode A A Y 28 im Glasgehäuse 51 A2 DIN 41880 D O -7 für universelle Anwendung ist unlackiert und durch Farbringe gekennzeichnet. Vom kathoden seitigen Ende beginnend lautet der Farbcode: braun/grau/rot/grau.
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q60101-y28-30mnt02mak2485+4germaniumgermaniumdiodema6050cd030
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AAY45
Abstract: AAY37 intel CORE i3 instruction set AAY20 AAY44 AAY36 AAY24 AAY38 AAY18 aay30
Contextual Info: Intel Xeon® Processor 3600 Series Specification Update May 2011 Reference Number:323338-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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aay45aay37intel core i3 instruction setaay20+6aay44aay36aay24aay38aay18aay30
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17
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