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    Nisshinbo Micro Devices RP509Z001C-E2-F

    - Tape and Reel (Alt: RP509Z001C-E2-F)
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    Avnet Americas RP509Z001C-E2-F Tape & Reel 12 Weeks 5,000
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    Mouser Electronics RP509Z001C-E2-F
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    Newark RP509Z001C-E2-F Tape & Reel 5,000
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    EBV Elektronik RP509Z001C-E2-F 25 Weeks 5,000
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    Nisshinbo Micro Devices RP509Z001D-E2-F

    Conv DC to DC Single Step Down 2.3V to 5.5V 6-Pin WLCSP T/R - Tape and Reel (Alt: RP509Z001D-E2-F)
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    Avnet Americas RP509Z001D-E2-F Tape & Reel 12 Weeks 5,000
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    Mouser Electronics RP509Z001D-E2-F 15,067
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    Newark RP509Z001D-E2-F Tape & Reel 5,000
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    EBV Elektronik RP509Z001D-E2-F 25 Weeks 5,000
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    Sensitron Semiconductors 1DB48-109Z-001 XRAY

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    Sensitron Semiconductors 1DB48-109Z-001 GROUP B TEST

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    Sensitron Semiconductors 1DB48-109Z-001 DATAPACK

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    Find more 9Z001 price and stock on Findchips.com

    9Z001 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Contextual Info: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		ne5520379a9z001hs350-p32052-5636-02 100pf+4gsm900mch185a180jkne5520379a-t1anec ldmos PDF

    NE5520379A

    Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		ne5520379a PDF

    silicon power gmbh

    Abstract: NE5520379A NE5520379A-T1 NE5520379A-T1A VP215
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		silicon power gmbhne5520379ane5520379a-t1ne5520379a-t1a+1vp215 PDF

    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		ne5520379a PDF

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Contextual Info: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		ne5520379a9z001gsm900/dcs12c5a+7ne55xxgsm900mch185a180jkne5520379a-t1a-a16651ic 7109ldmos nec PDF

    NE5520379A

    Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		ne5520379ane5520379a-t1ne5520379a-t1avp215+1ldmos nec PDF

    LM50 sot23-5

    Abstract: LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737
    Contextual Info: 2005^ 4 ^ 1 m m jim m m t t * * * « it m * * m m m m m z m m m m z * . u tm u m h * * * » » |t f c g « M 2 -7 n ^ fts a » a « * ' Ä lttlÄ Ä B te ir a f e >m ' « « f t * X |I » J : TO m » • REID M U M ttA ' K ä U M U M ß U l Mtklrm •


    OCR Scan     		lm6181narrow-16lm7171cerpack-10+12lm7372lmc6035lm50 sot23-5lms48fpd87370usbn9604lmx2324ssop-eiaj287i sot23-3stt150ds92lv1021afpd8737 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		ne5520379a PDF