DC-18V
Abstract: JS1-24V-F
Contextual Info: JS VDE 1a/1c 10A cubic type power relays RoHS compliant JS RELAYS FEATURES TYPICAL APPLICATIONS • Miniature size with universal terminal footprint • High contact capacity: 10 A • TV-5 type available Standard type 1 Form A type → TV-5 1 Form C type → TV-5 (N.O. side only)
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Contextual Info: JS VDE 1a/1c 10A cubic type power relays RoHS compliant JS RELAYS FEATURES TYPICAL APPLICATIONS • Miniature size with universal terminal footprint • High contact capacity: 10 A • TV-5 type available Standard type 1 Form A type → TV-5 1 Form C type → TV-5 (N.O. side only)
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JS1-48V
Abstract: JS1-12V-F JS1aF-B-12V JS1APF-B-12V-F JS1AF-B-12V-F JS1-24V-F E43028 JS1-24V JS1AF-48V-F JS1APF-B-18V-F
Contextual Info: VDE 1a/1c 10A cubic type power relays Compliance with RoHS Directive JS RELAYS FEATURES TYPICAL APPLICATIONS • Miniature size with universal terminal footprint • High contact capacity: 10 A • TV-5 type available Standard type 1 Form A type → TV-5
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en60335-14fla/4lra125v2fla/4lra125v6fla/6lra125v+11lr26550e43028js1-48vjs1-12v-fjs1af-b-12vjs1apf-b-12v-fjs1af-b-12v-fjs1-24v-fjs1-24vjs1af-48v-fjs1apf-b-18v-f
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millionspot h 200
Abstract: relay 6V - 9V SPDT spdt 9v relay millionspot h 500 millionspot millionspot H DC 9V miniature SPDT relay millionspot h 200 24V 6V - 9V SPDT relay relay 6V 9V SPDT
Contextual Info: M ILLIONSPOT H810 FEATURES • 10 AMPS, TV-5 RATED • HEAVY DUTY MINIATURE SLIM TYPE POWER RELAY •SIZE: 2 9 . 5 X 1 3 X 2 1 mm • HIGH ISOLATION IN SMALL PACKAGE - INSULATION DISTANCE : 8mm - DIELECTRIC STRENGTH : 5000 VAC • STANDARD & HIGH SENSITIVE TYPE
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5x13x2194-v0millionspot h 200relay 6v - 9v spdt+8spdt 9v relaymillionspot h 500millionspotmillionspot hdc 9v miniature spdt relaymillionspot h 200 24v6v - 9v spdt relayrelay 6v 9v spdt
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Relay 5V DC - 2P, 1C, 10A
Abstract: relay 5v 250v
Contextual Info: Relay MiniAture Power relay - Type RPS R sERIES Introduction: Adam Tech RPS relays are modern PCB low power relays. Sometimes known as ‘Sugar Cube’ relays, these small relays can switch loads up to 10 amps. They are available in 1 form A, and 1 form C contact formats within a sealed package. These relays
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360mwrelay 5v dc - 2p, 1c, 10arelay 5v 250v |
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AN7254
Abstract: RFP12P08 RFP12P10 TB334 TA17511
Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
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RFP12P10
Abstract: RFP12P08 TB334
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
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magnetron panasonic
Abstract: panasonic magnetron lr2655 Microwave Oven Panasonic
Contextual Info: LE ALE VDE 1a 16A power relay for micro wave oven LE RELAYS (ALE) FEATURES TMP type 1. Supports magnetron and heater loads. Capable for switching magnetron and heater loads found in microwave ovens. 2. Excellent heat resistance Ambient temperature: up to 85°C 185°F
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400mw/200mw039inche43149+7lr26550asctb194e201202-tmagnetron panasonicpanasonic magnetronlr2655microwave oven panasonic
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microwave oven magnetron
Abstract: panasonic magnetron magnetron panasonic relay 12v 16A30VDC ALE14B12 ALE1205 E43149 48v to 5v dc schematic
Contextual Info: LE ALE VDE 1a 16A power relay for micro wave oven LE RELAYS (ALE) FEATURES TMP type PCB type Compliance with RoHS Directive 1. Supports magnetron and heater loads. Capable for switching magnetron and heater loads found in microwave ovens. 2. Excellent heat resistance
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400mw/200mw039inche43149+9lr26550microwave oven magnetronpanasonic magnetronmagnetron panasonicrelay 12v16a30vdcale14b12ale120548v to 5v dc schematic
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rfp12p10
Abstract: rfp12p08 TB334 FAIRCHILD to220ab package
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
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NTE379
Abstract: NTE379 equivalent
Contextual Info: NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited
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relay 12 volt
Abstract: diode SM 88A 12 VOLT 2 AMP regulator diode ESM 15 MODEL SA 12 volt 10 amp relay 12 volt relay 100 volt 60 amp to 220
Contextual Info: features Four useful power rails in one package Rugged construction Universal mains input Overvoltage Protection on all 5 volt rails “ Off the shelf” availability description The "ESM" Series of System Power Units have been developed to meet the general requirements of hybrid analogue/digital systems
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mil217brelay 12 voltdiode sm 88a12 volt 2 amp regulator+5diode esm 15model sa12 volt 10 amp relay12 volt relay100 volt 60 amp to 220
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IRF9530
Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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irf9530rf1s9530smta17511dc motor 9v+4data sheet irf9530rf1s9530rf1s9530sm9atb334
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IRF9530
Abstract: IRF9531 IRF9530 mosfet
Contextual Info: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate
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magnetron panasonic
Abstract: panasonic magnetron faston Weld tabs ul JM1aN-ZTM-DC12V LR26550 20a jm 60 ac microwave oven magnetron RELAY 20A 12V DC24V DC48V
Contextual Info: JM VDE Ideal for compressor and motor control Inrush 80A, 1a 20A power relay JM RELAYS FEATURES Flat type Slim type Compliance with RoHS Directive • Compact, high-capacity, and resistant to inductive loads It can control an inductive load with inrush current of 80 A and steady
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e4302811/2hplr26550magnetron panasonic+9panasonic magnetronfaston weld tabs uljm1an-ztm-dc12vlr26550 20ajm 60 acmicrowave oven magnetronrelay 20a 12vdc24vdc48v
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panasonic magnetron
Abstract: 230V AC to 5V DC diode LR26550 20a
Contextual Info: JM VDE Ideal for compressor and motor control Inrush 80A, 1a 20A power relay JM RELAYS FEATURES • Compact, high-capacity, and resistant to inductive loads It can control an inductive load with inrush current of 80 A and steady state current of 20 A. • Excellent contact welding resistance
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lr26550asctb184e201202-tpanasonic magnetron+2230v ac to 5v dc diodelr26550 20a
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relay TRD 24v dc
Abstract: 600VA AT20 tv-5 relay
Contextual Info: TRD TRDT with TV-5 Approval n MAIN FEATURES • Switching capacity available by 12A in spite of small size design for high density P.C. board mounting technique. · UL/CSA recognized. TRDT TV-5 Approval . · Selection of plastic material for high temperature and better chemical solution
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600VA
Abstract: AT20
Contextual Info: TRD TRDT with TV-5 Approval n MAIN FEATURES • Switching capacity available by 12A in spite of small size design for high density P.C. board mounting technique. · UL/CSA recognized. TRDT TV-5 Approval . · Selection of plastic material for high temperature and better chemical solution
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Contextual Info: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14schematic diagram 230vac to 24vdc power supply48v 30a spdt relayim03d+7pch-124n mosfet 250v 600avaristor 275 l20pa66 - gf 25 relaymarking code w16 smd transistor90w 19.5v power adapter pcbg6cu-2117p
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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IRF9130
Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
Contextual Info: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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irf9130-100vgate driver for mosfet irf9130irf9130 mosfet+3power mosfets to 204aatc.. 12a mosfet driversgate drive for mosfet irf9130
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relay spdt 5v 2a 100mW
Abstract: RELAY dPDT 16A 30VDC 12v, DPST relay AT20 1A ,125vdc relay 5vdc relay 16A DPDT RELAY DPDT 2c inductive load 5V 3A SPDT RELAY relay 6V 9V SPDT
Contextual Info: TRI n MAIN FEATURES • Slim type and small occupying space can offer high density P.C.B. technique. · Insulation distance of 8mm min. is designed. By employment of insulation material to meet JIS insulation class E, dielectric strength of 5000V min. and surge resistiveness 10000 min. is realized.
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relay spdt 5v 2a 100mwrelay dpdt 16a 30vdc12v, dpst relayat20+51a ,125vdc relay5vdc relay 16a dpdtrelay dpdt 2c inductive load5v 3a spdt relayrelay 6v 9v spdt
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Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,
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