9FC MARKING CODE Search Results

transistor 9fb

Abstract: 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage

9FC SOT23

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Collector Emitter Voltage

BC808

Abstract: 9fb transistor bc807 BC817 BC818 026 pnp
Contextual Info: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807

UTC marking

Contextual Info: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

9FC SOT23

Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage

C5 MARKING TRANSISTOR

Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage

HBC807

Abstract: marking 9fb 9FC SOT23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

marking code va transistors

Abstract: BC807 BC808 sot-23 Marking sj
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic

HBC807

Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

BC807

Abstract: marking code 9FB marking 9fb BC808 9FC SOT23
Contextual Info: BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage

9FC SOT23

Abstract: BC807 BC808
Contextual Info: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

marking CODE "25M" SOT23 -3

Abstract: BC80725MTF fairchild sot-23 Device Marking pc MARKING 25M SOT23 BC80840MTF
Contextual Info: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

smd code 9fc

Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Contextual Info: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti­ fier utilize advanced processing techniques to

Contextual Info: PD 9.1437 International lö R Rectifier IRF9540N PRELIMINARY H E X F E T Pow er M O S F E T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V DSS = - 1 0 0 V

Contextual Info: NCV97310 Product Preview Automotive BatteryConnected Low-Iq MultiOutput Power Management Unit with 3 Buck Regulators http://onsemi.com Description The NCV97310 is a 3−output regulator consisting of a low−Iq battery−connected 3 A, 2 MHz non−synchronous switcher and two

Contextual Info: CUBIT-622 Device DATA SHEET PRODUCT PREVIEW DESCRIPTION FEATURES The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3,

CBD10

Abstract: intel 7882 MARKING 09F PHAST-12E TXC-05802B TXC-05810 TXC-06212 SA 6356
Contextual Info: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or

Contextual Info: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DATA SHEET DESCRIPTION The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3,

A01H

Abstract: 9FF MARKING T-RA18 SA 6356
Contextual Info: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or

Contextual Info: CUBIT-622 Device DATA SHEET PRODUCT PREVIEW DESCRIPTION FEATURES The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3,

Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CM22 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CM22

PDCR 900

Abstract: SMD Transistor p1f transistor SMD P1f smd marking code E1H marking code p52 SMD al p67 smd smd code marking 5h semiconductor SMD MARKING CODE ad 5.9 PDCR 900 series MV15
Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CM22 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CM22