9850 RECEIVER Search Results

Contextual Info: DS26C32AT/DS26C32AM Quad Differential Line Receiver General Description Features The DS26C32A is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020 and 1030 for balanced and unbalanced digital data transmission, while retaining the low power characteristics of CMOS.

9850BR

Abstract: d9850 capacitor 1c8 ad9850 Application AD9850C AD9850D AD9850
Contextual Info: ANALOG DEVICES FEATURES 125 MHz Clock Rate On-Chip High Performance DAC and High Speed Comparator DAC SFDR > 50 dB @ 40 MHz A 0 U t 32-Bit Frequency Tuning Word Sim plified Control Interface: Parallel Byte or Serial Loading Format Phase M odulation Capability

DS26C32ATN

Abstract: DS26C32ATM national semiconductor, product catalog CM1616 DS26C32ATJ
Contextual Info: DS26C32AT/DS26C32AM Quad Differential Line Receiver General Description Features The DS26C32A is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020 and 1030 for balanced and unbalanced digital data transmission, while retaining the low power characteristics of CMOS.

p8287

Abstract: 2.4GHz spread spectrum rc radio circuit diagram 9850 RECEIVER rake complex AN9820 AN9850 HFA3861A QPSK DSSS HFA3783 HFA3841
Contextual Info: Complementary Code Keying Made Simple TM Application Note May 2000 AN9850.1 Author: Bob Pearson Introduction The draft text [1] of the high speed extension of the IEEE802.11 Standard specifies Complementary Code Keying CCK as the modulation scheme for 5.5 and 11Mbps data rates in the

p8287

Abstract: AN9850 2.4GHz spread spectrum rc radio circuit diagram AN9820 HFA3861A "Multiphase Complementary Codes" 2.4GHz rc radio circuit diagram rake complex QPSK DSSS "Complementary Code Keying"
Contextual Info: Complementary Code Keying Made Simple TM Application Note November 2001 AN9850.2 Author: Bob Pearson This is a simplified explanation and NOT to be used for design purposes. Please contact Intersil for details. Introduction The draft text [1] of the high speed

DS26C31MJ/883QS

Contextual Info: DS26C31T/DS26C31M CMOS Quad TRI-STATE Differential Line Driver General Description Features The DS26C31 is a quad differential line driver designed for digital data transmission over balanced lines. The DS26C31T meets all the requirements of EIA standard RS422 while retaining the low power characteristics of CMOS.

AD9850

Contextual Info: CMOS, 125 MHz Complete DOS Synthesizer AD9850 ANALOG DEVICES FUNCTIONAL BLOCK DIAGRAM FEATURES 125 M H z Clock Rate On-Chip High Performance DAC & High Speed Comparator DAC SFDR > 50 dB @ 40 M Hz AOUT 32-Bit Frequency Tuning Word Sim plified Control Interface: Parallel Byte or Serial

ad9850 am modulation

Abstract: AD9850
Contextual Info: ANALOG DEVICES CMOS, 125 MHz Complete DDS Synthesizer AD9850 FEATURES 125 M H z Clock Rate On-Chip High Performance DAC & High Speed Comparator DAC SFDR > 50 dB @ 40 M H z AOUT 32-B it Frequency Tuning W ord Sim plified Control Interface: Parallel Byte or Serial

ASSP3

Abstract: 20X4 LCD internal block diagram 20X4 LCD automotive dashboard instrument NEC nec dashboard programmer 40x4 lcd 9850 RECEIVER Display LCD 20x4 lCD 20x4 datasheet U12326EJ3V0UM00
Contextual Info: µPD78F0852 µPD780851/52 78K0 family 8-bit Microcontrollers Product Letter Description The µPD78 F 085x is a member of NEC’s 78K0 8-bit microcontroller family. Based on 0.35 mm technology, the devices integrate powerful application-specific peripherals. They offer

sap16

Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
Contextual Info: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification

HYMP351R72AMP4-E3

Abstract: DDR2-400 DDR2-533 DDR2-667 hynix DDR2 4GB registered SDRAM DIMM HYMP351
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of

d985 k

Abstract: AD9850D 9850 fee AD9851 ADSP-2181 ez-kit program
Contextual Info: CMOS 180 MHz DDS/DAC Synthesizer AD9851 ANALOG DEVICES FEATURES 180 MHz Clock Rate w ith Selectable 6 x Reference Clock M ultiplier On-Chip High Performance 10-Bit DAC and High Speed Com parator w ith Hysteresis SFDR >43 dB @ 70 MHz A 0 U t 32-Bit Frequency Tuning W ord

HYMP351R72AMP4-E3

Abstract: DDR2-400 DDR2-533 DDR2-667 HYMP112R72AP8-E3 HYMP125R72AP4-E3 Q22-D
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of

FT-920 Switch Board Mod

Abstract: FT-101Z 70.455 FT-847 ROOFING IC-756 FT-1000MP "Crystal Filters" FT-1000D 9850 RECEIVER
Contextual Info: Summer 2008 Catalog Welcome! -60 dB to its bandwidth at -6 dB is the filter’s “shape factor.” A perfect shape factor would be 1. Typically, we encounter shape factors of 1.5 to 3.0 or more for crystal filters in current amateur use. Refer to page 14 for

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based

DDR2-667

Abstract: DDR2-800
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based

HMP45

Abstract: DDR2-667 DDR2-800 HMP451S6MMP8C h5ps4g83mmp DDR2 hynix
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 2Gb version A based

Contextual Info: 64Mx72 bits DDR2 SDRAM Registered DIMM HYMP564R72A L 8 DESCRIPTION Preliminary Hynix HYMP564R72(L)8 series is registered 240-pin double data rate 2 Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMP564R72(L)8 series consists of nine 64Mx8 DDR2 SDRAMs in 60-Lead FBGA chipsize packages. Hynix HYMP564R72(L)8 series provide a

DDR2 sstl_18 class

Abstract: DDR2-400 DDR2-533 HYMP112S64MP8 HYMP512S64MP8 MO-224 PC2-3200 PC2-4300
Contextual Info: 128Mx64 bits DDR2 SDRAM SO-DIMM HYMP112S64 L MP8 Revision History No. 0.1 History 1) Defined target spec. 2) Corrected Pin assignment table Date Remark July 2004 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

HY5PS1G

Abstract: 31CFP
Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb N version This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb version N DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb

Contextual Info: 32Mx64 bits DDR2 SDRAM SO-DIMM HYMP232S64 L 8 Revision History No. History Date 0.1 Defined Target Spec. May. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 32Mx64 bits DDR2 SDRAM SO-DIMM HYMP532S64 L 6 Revision History No. 0.1 0.2 History Date Defined Target Spec. Dec. 2003 Corrected SPD typos May 2004 Corrected SPD typos Corrected typo of pin assignment(#140) Jul. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 32Mx64 bits DDR2 SDRAM SO-DIMM HYMP532S64 L P6 Revision History No. History Date 0.1 Defined Target Spec. July 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.