97A IR Search Results

TL497

Abstract: TL497A rIP 31 TRANSISTOR 8bc regulator L497A transistor 8bc
Contextual Info: TEXAS INSTR LIN/INTFC lôE J> WM 0 ^ 1 7 2 4 0Q7TSfl3 7 TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D2225, JU NE 1 9 7 6 -R 6 V IS E D OCTO BER 1988 High Efficiency . , . 6 0 % or Greater TL4 97A M . . . J PAC KA G E TL497AI, T L4 97A C . . . D, J, OR N PAC KA G E

APT20M22JVRU2

Abstract: 200V 200A mosfet
Contextual Info: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT20M22JVRU3

Abstract: 200V 200A mosfet MOSFET Module 100v 1000A
Contextual Info: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A • • • A S Power MOS V® MOSFETs - Low RDSon

APT20M22JVRU3

Contextual Info: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A A S • • • Power MOS V® MOSFETs - Low RDSon

Contextual Info: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application •  G AC and DC motor control Switched Mode Power Supplies Features S  A A S    Power MOS V® MOSFETs - Low RDSon

Contextual Info: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch

APT20M22JVFR

Contextual Info: APT20M22JVFR 97A 0.022Ω 200V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M22JVFR A d van ced P o w er Te c h n o l o g y POWER MOSV 200V 97A 0.0220 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

KF 517

Abstract: QX 78 7333S 47y3
Contextual Info: 97A-1 5C3; A>;:5 AB3B6 @6;3F 7KHVWTKU E`c\ Kf1=D4667;4 z ClXc @B flkglk i\cXp z C`\c\Zki`Z jki\e^k_ 7333S z PBO flkglk E`c\ Kf1=O834659<; z EXjkfe k\id`eXc i\cXp z Dem`ifed\ekXc ]i`\e[cp gif[lZk ,OfGP Zfdgc`XekE`c\ Kf1=BNB3;334356:3 :=?CB ,QX ? 58 86=6@3; ,QX ? 58

200V 200A mosfet

Abstract: SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2
Contextual Info: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile

2N1074

Abstract: 2N1077 2N1076 CK420 2N1075 2SA446 2sc196 A3T2221 PET8007A R110
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: N Series connectors are medium sized, and weatherproof. The coupling method utilizes a screw system designed for use at frequencies up to microwave. These connectors are particularly useful where precision performance is necessary such as in test equipment, satellite communications, MATV, computer LAN systems, and

Contextual Info: N Series connectors are medium sized, and weatherproof. The coupling method utilizes a screw system designed for use at frequencies up to microwave. These connectors are particularly useful where precision performance is necessary such as in test equipment, satellite communications, MATV, computer LAN systems, and other high-tech electronic

MIL H 7199

Abstract: MIL-H-7199 ferrule crimp pull test 162V504E BS4271 qq-c-576 twin bnc DSASW0012651 MIL-C-39012 TNC panel
Contextual Info: Specifications for "N" Connectors _ N Series connectors are medium sized, and weatherproof. The coupling method utilizes a screw system designed for use at frequencies up to microwave. These connectors are particularly useful where precision performance is necessary such as in

Contextual Info: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

PD-95660

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

LM2901 SIGNETICS

Abstract: LM339 LM339AN 14 pin diagram LM339 signetics 139 LM MC3302 LM139 LM139AF LM139F LM2901
Contextual Info: Sigrietics Integrated C ircu its-C o m p a ra to rs LM2901, MC3302, LM139 Series —Quad Voltage Comparator G E N E R A L D E SC RIPTIO N The LM 139 series consists o f fo u r independent precision voltage com parators w ith an o ffs e t voltage specification as

Contextual Info: International i “r Rectifier • 4455452 ÜÜ1SD,M370 " INR PD'9'737 IRFI530G HEXFET* Power MOSFET • • • • • • INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S D Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

Contextual Info: International I« Rectifier 4055452 0015^04 3T7 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER PD-9.844 IIN R IRLI530G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5V

CS462

Abstract: CS4630 CS4297 CS4624 CS4630-CM MPU401 MPU-401 sound card Creative sound blaster 4 channel 4B4H
Contextual Info: CS4630 CrystalClear SoundFusion PCI Audio Accelerator Features l l l l l l l l l l l l l l l l l l l Description 420 MIPs SLIMD DSP Architecture with increased internal memory for greater performance Hardware acceleration for Microsoft DirectSound and DirectSound3D

irf 450a

Abstract: IRFPS3815 4490 mosfet
Contextual Info: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International

IRL3302

Abstract: ld 18
Contextual Info: PD 9.1696 International IQR Rectifier IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching V dss = 20 V RüS on = 0.020Í2 lD = 39A