5343P
Abstract: z319 BOB363343398 43gr HD R 433 M
Contextual Info: 64>+} >;872 >?/?3 =38/C 4IETURIS Ead] Lg= D4667;4 [ Hfhml= CB [gfljgd [ CgmZd] QBP @B gmlhml gj RPH@B @B gmlhml Ead] Lg1= I83394738 [ Ca]d][lja[ klj]f_l` 7333T [ Njafl]\ [aj[mal ZgYj\ egmfl [ Dfnajgfe]flYd ^ja]f\dq hjg\m[l ,PgGQ [gehdaYfl- Ead] Lg1= BOB363343398;4
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d4667i833947387333tbob363343398+743ekkyp1g43ek-gmlhml4775343pz31943grhd r 433 m
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HD R 433 M
Abstract: 3tb 40 BOB363343398 a 433 k lg dd
Contextual Info: 75@,~ y96E|,~5z @=:83 @A0A4 ?4:0F 5LHWXULV _ Hfhml= CB [gfljgd _ CgmZd] QBP @B gmlhml gj RPH@B @B gmlhml Ead] Lg= D4667;4 _ 7333T \a]d][lja[ klj]f_l` _ Njafl]\ [aj[mal ZgYj\ egmfl Ead] Lg1= I83394738 _ PgGQ [gehdaYfl Ead] Lg1= BOB363343398;4 8<>BA ,R@ ? 58
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d46677333ti83394738bob363343398+965tcb48tcb4333k833tcb-418eehd r 433 m3tb 40a 433 klg dd
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BOB363343398
Abstract: lg dd D4667
Contextual Info: 31;~{ ;854/ ;<,<0 :05,@ 1FBQROFP X Hfhml= CB [gfljgd X CgmZd] QBP @B gmlhml gj RPH@B @B gmlhml Ead] Lg= D4667;4 X 7333T \a]d][lja[ klj]f_l` X Njafl]\ [aj[mal ZgYj\ egmfl Ead] Lg1= I83394738 X PgGQ [gehdaYfl Ead] Lg1= BOB363343398;4 479=< ,R@ ? 58 2070:,5 ,R@ ? 58
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d46677333ti83394738bob363343398+665tcb48tcb4333k833tcb-418eelg dd
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KF 517
Abstract: QX 78 7333S 47y3
Contextual Info: 97A-1 5C3; A>;:5 AB3B6 @6;3F 7KHVWTKU E`c\ Kf1=D4667;4 z ClXc @B flkglk i\cXp z C`\c\Zki`Z jki\e^k_ 7333S z PBO flkglk E`c\ Kf1=O834659<; z EXjkfe k\id`eXc i\cXp z Dem`ifed\ekXc ]i`\e[cp gif[lZk ,OfGP Zfdgc`XekE`c\ Kf1=BNB3;334356:3 :=?CB ,QX ? 58 86=6@3; ,QX ? 58
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d46677333so83465948scb+665scbb/83gq293gq/4d5833skf 517qx 7847y3
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Contextual Info: D4667-3 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.5.0G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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