966 MHZ Search Results

HP3326A

Abstract: c 5568 LT5568 quadrature modulator cdma200 MODULATOR ofdm 64-qam
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 966 HIGH LINEARITY DIRECT QUADRATURE MODULATOR LT5568 DESCRIPTION Demonstration circuit 966 is an I/Q modulator featuring the LT 5568. The LT 5568 is a 700MHz to 1.05GHz direct I/Q modulator designed for high performance wireless

CTF100

Abstract: EN1-12
Contextual Info: RS Components Part # 6655883 - CTF100, 100m reel Design Inner conductor Part NO: RGW-966 Product Code: CTF100 Product Description Application: For communication and signal control systems. Reference Standard Customer's sample spec.and the general standard

marking m5S

Abstract: smd code marking C8 SCT-598-8-1 966 MHz
Contextual Info: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :

BF966

Abstract: BF961
Contextual Info: BF 966 S TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes

Contextual Info: TCXO 966 OBSOLETE PART: Go to http://www.corningfrequency.com for the latest product information Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range

marking m5S

Abstract: RF mixer L-Band CMY212 SCT-598-8-1 marking code AN mmic
Contextual Info: GaAs MMIC CMY 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications • Typical overall performance at cellular frequencies for PLO = – 4 dBm operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz :

Corning Frequency Control

Contextual Info: TCXO 966 Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range Compact Size Wide Frequency Range High Stability EFC Standard Surface Mount Available

10M00000

Abstract: Corning Frequency Control
Contextual Info: 7&;2 966  Typical Applications Features Land Mobile Radio Cellular Telephony Radio in the Local Loop Test Equipment Digital Switching Hermetic Seal Package Wide Temperature Range Compact Size Wide Frequency Range High Stability EFC Standard Surface Mount Available

Contextual Info: AMPS / PCS On-Glass-Antenna MCA ON-2CP Part No. 927 913-966 14,85 In. Dual Band 800/1900 MHz On-Glass-Antenna * 196.8 In. Technical data Frequency range AMPS: 806 - 890 MHz PCS: 1850 - 1990 MHz Impedance 50 Ω Gain AMPS: 3 dBd PCS: 2 dBd Connection cable

Contextual Info: Frequency Mixer SCM-5LH Typical Performance Curves Conversion Loss @ IF=30MHz 12.0 LO = +7dBm Conversion Loss dB 11.3 LO = +10dBm 10.6 LO = +13dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 800 966 1132 1298 1464 1630 1796 1962 2128 2294 2460 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1525MHz

Contextual Info: Frequency Mixer SCM-5LH Typical Performance Curves Conversion Loss @ IF=30MHz 12.0 LO = +7dBm Conversion Loss dB 11.3 LO = +10dBm 10.6 LO = +13dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 800 966 1132 1298 1464 1630 1796 1962 2128 2294 2460 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1525MHz

marking m5S

Contextual Info: Infineon tssihncio^iat GaAs MMIC CM Y 212 Data Sheet • Ultralinear mixer with integrated IF-amplifier and LO-Bufferfor CDMA receiver applications • Typical overall performance at cellular frequen­ cies for P L0 - - 4 dBm operation conditions: 3 V, 11 mA ;/RF = 881 M Hz;/L0 = 966 MHz :

transistor k 3562

Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
Contextual Info: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

8051 microcontroller dallas with 1620

Abstract: program ds1620 with 8051 8051 microcontroller based Digital clock with alarm LCD interfacing to 8051 ds1620 interfacing with 8051 AN966 LCD based digital thermometer using 8051 microcontroller 8051 application of alarm clock DS1620 lcd interface with 8051
Contextual Info: MICROCONTROLLERS TEMPERATURE SENSORS Application Note 966: Feb 21, 2002 App Note 134: Interfacing the DS1620 with a DS5000/8051 Microcontroller This application note introduces the user to software for interfacing a DS5000 8051 compatible microcontroller to the DS1620 digital temperature sensor. The DS1620

ID100

Abstract: MSAFX10N90A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts 10 Amps 1.1 Ω • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features • • • • • • • 900 Volts 10 Amps 1.1 Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Architecture of TMS320C54

Abstract: arm9 architecture ARM9 VOICE RECORDER ARM VOICE RECORDER ARM Source code STR91XFA ARM9 32 Bit MCU ARM9 datasheet VOICE RECORDer on USB flash memory arm11 benchmark
Contextual Info: STR910 32-bit Flash Microcontroller powered by ARM 966 Embedding connectivity 32-bit ARM9-based Flash Microcontrollers March 2008 ARM CPU Cores ARM leads the world in RISC microprocessor cores 2 billion ARM-based products shipped in 2006! Becoming global standard for best

Contextual Info: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

ID100

Abstract: MSAFX24N50A Diode Ds 135. 12A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

MM018-06L

Abstract: MM118-06 MM118-06F MM118-06L MM118-12 MM118-XX IGBT 3kv tbd 380
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MM118-XX SERIES Features • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF • Compact and rugged construction offering weight and space savings

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A

MSAGZ52F120A

Abstract: MSAHZ52F120A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features • • • • • • • • 1200 Volts 52 Amps 3.2 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof