9627 Search Results

IRFH5301

Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
Contextual Info: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters

IRLB3036GP

Abstract: IRLB3036GPBF
Contextual Info: PD - 96275 IRLB3036GPbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ. max. ID (Silicon Limited)

74LS240

Abstract: 75108 74LS244 74S140 74LS241 74LS540 74LS541 E105
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I8 9622 17 9621 19 9624 GND [ I 2 Nc Q 3 IN A l C 4 IN A 2 ^ 5 IN A3 Q 6 IN A O Q 7 Vd d L f t •14 □ vcc 13 □ tap 12 □ nc 11 □ in B3 10 J in B2 9 □ in B1 8 □ OUT B 112 9650 110 111 9625 9627 1 GND

KAC-9627

Abstract: 648H LM9617 LM9627 LM9628 LM9628 Application note 1
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAC-9627 CMOS IMAGE SENSOR 648 H X 488 (V) High Dynamic Range 30 fps Color CIS February 2006 Revision 1.5 www.kodak.com/go/imagers 585-722-4385 1 Email:imagers@kodak.com Version 1.5 February 2006

Contextual Info: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters

Contextual Info: PD - 96271 IRG7CH54K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution

18704

Abstract: P-18701
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS21S07A Nov-96 9627 B2 ANAM, PI. DK623631ABA2 0.8µ NITRIDE 20 TSSOP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C):

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2401 Sep-96 9627 B1 CARSEM DM611170AJ 1.2µ OX/NI 03 TO-92 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-18166, P-18189 READPOINT

IRG7CH44K10B

Abstract: IRG7CH44
Contextual Info: PD - 96270A IRG7CH44K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution

irf9204

Abstract: irf920 IRF9204PBF 966a
Contextual Info: PD - 96277B IRF9204PbF Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D VDSS = -40V RDS on = 16mΩ

9624

Abstract: 11C24 11C44 11C58 E106 10125 ecl to ttl
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I8 9622 17 9621 19 9624 GND [ I 2 Nc Q 3 IN A l C 4 IN A 2 ^ 5 IN A3 Q 6 IN A O Q 7 Vd d L f t •14 □ vcc 13 □ tap 12 □ nc 11 □ in B3 10 J in B2 9 □ in B1 8 □ OUT B 112 9650 110 111 9625 9627 1 GND

Contextual Info: PD - 96278 IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET *   ' 6  Micro3TM (SOT-23) IRLML0030TRPbF Application(s) • Load/ System Switch Features and Benefits Benefits Features

3m 9626

Abstract: 9626
Contextual Info: Adhesive Transfer Tape with Quick Bonding Adhesive 360 9626 • 9627 Technical Data Product Description Construction November, 2009 3M Adhesive Transfer Tapes with 3M™ Quick Bonding Adhesive 360 provides high bond strength to most surfaces, including many low surface energy plastics such as

IRLML6346

Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020
Contextual Info: PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features

9627C

Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUIT . 9627 9627 • 9627C ELEC TR IC AL CHARACTERISTICS V c c + “ 12 V ±10%, V g c - = - 1 2 V ±10% over Operating Temperature Range, unless otherwise specified MIL-STD-188C SYMBOL PARAMETER v OL Output LOW Voltage v OH

Fairchild 9614

Abstract: 15 1E78 312-3 m 9625 TTL 7440 8T13 8T14 8T23 8T24 654S
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 17 9621 I8 9622 19 9624 GND [ I 2 Nc Q 3 IN A l C 4 IN A 2 ^ 5 IN A3 Q 6 IN A O Q 7 Vd d L 111 110 9627 9625 f t •14 □ vcc 13 □ tap 12 □ nc 11 □ in B3 10 J in B2 9 □ in B1 8 □ OUT B 112 9650 1 GND

Voltage-to-Frequency Interface

Abstract: B1 9A 9650 1306B m 9625 DAC-08 TTL CMOS wj 6n
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I8 9622 17 9621 19 9624 GND [ I 2 Nc Q 3 IN A l C 4 IN A 2 ^ 5 IN A3 Q 6 IN A O Q 7 Vd d L f t •14 □ vcc 13 □ tap 12 □ nc 11 □ in B3 10 J in B2 9 □ in B1 8 □ OUT B 112 9650 110 111 9625 9627 1 GND

Contextual Info: PD - 96272 IRG7CH75K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution

IRLML0030

Abstract: IRLML0030TRPBF AN-994 EIA-541 IRLML0030TR 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 96278A IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET *   ' 6  Micro3TM (SOT-23) IRLML0030TRPbF Application(s) • Load/ System Switch Features and Benefits Benefits

AUIRG7CH80K6B-M

Abstract: MIL-HDBK-263
Contextual Info: AUTOMOTIVE GRADE • PD - 96279 AUIRG7CH80K6B-M 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C

AUIRG7CH80K6B-M

Abstract: for IR IGBT die MIL-HDBK-263
Contextual Info: AUTOMOTIVE GRADE • PD - 96279 AUIRG7CH80K6B-M 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C

9582 Fairchild

Abstract: Fairchild 9582 9582 ECL 10114 10115 ecl 100114 10116 RECEIVER ECL logic Fairchild 96106
Contextual Info: INTERFACE SELECTION GUIDE BY DEVICE NUMBER Power Dissipation mW (Typ) tpd (ns) (Typ) Number Receivers per Package ±1 No ECL -5 .2 250 2.2 3 6B 9627 Dual R S 232/ M IL Std 188 Line Receiver 9616 45 ±25 No TTL ±12 234 70 2 6B.9B.3I 10014* Active Termination

Contextual Info: PD -96273 PDP TRENCH IGBT IRG7I319UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability

MIL-STD-188C

Abstract: RS-232C AJA9627DMQB FD777
Contextual Info: F A IR C H IL D 9627QB Dual Line Receiver A Schlum berger Com pany MIL-STD-883 July 1986— Rev 16 A erospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP {Top View The jjA 9627QB is a dual line receiver w hich meets the