95221 Search Results

IEC255

Abstract: iec255 relay nhg relay IEC255-19-1 IEC255-5 IEC68-2-20 IEC68-2-27
Contextual Info: Présente / Presents: DB LECTRO Inc. 3755 Place Java, Suite 140, Brossard, Québec, J4Y 0E4, Canada - T: 1-450-444-1424 / F: 1-450-444-4714 / www.dblectro.com NV2R NHG RELAYS NV2R Operation condition Patent No.: 95221385.0 37 16.5 17.1 Features Small size, light weight.

314P

Abstract: diode smd 270a
Contextual Info: PD - 95221 IRLL024NPbF HEXFET Power MOSFET Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS on = 0.065Ω G ID = 3.1A S Fifth Generation HEXFETs from International Rectifier

IRLL024NPBF

Abstract: 314P
Contextual Info: PD - 95221 IRLL024NPbF HEXFET Power MOSFET Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS on = 0.065Ω G ID = 3.1A S Fifth Generation HEXFETs from International Rectifier

IEC255

Abstract: iec255 relay relay iec255 NV2R RELAY DC12V DATA SHEET IEC255-5 IEC255-7 IEC68-2-27
Contextual Info: NV2R Patent No. 95221385.0 37x16.5×17.1 Features Small size, light weight. Withstands high temperature, operational under 105’ ambient temperature. Heavy contact load switching current up to 10A. Ordering Information NV2R S 1 DC12V 0.64 2 3 4 1 Part number：NV2R

PA5711

Contextual Info: 95221 PA5711 Only One Name Means ProTek’Tion high voltage led driver applications Description • General Illumination Displays • Industrial & Decorative LED Lighting • Automotive Applications • DC/DC or AC/DC LED Driver Applications • Constant Current Source

Contextual Info: PD - 95221 IRLL024NPbF HEXFET Power MOSFET Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS on = 0.065Ω G ID = 3.1A S Fifth Generation HEXFETs from International Rectifier

JEDEC-JESD47

Abstract: vs-mbr745
Contextual Info: VS-MBR7.PbF Series, VS-MBR7.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 7.5 A FEATURES Base cathode 2 • 150 °C TJ operation • High frequency operation • Low forward voltage drop 3 Anode 1 Cathode TO-220AC • High purity, high temperature epoxy

Contextual Info: VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK

10ETS

Abstract: 10ETS08 10ETS12 AN-994
Contextual Info: 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS TO-220AC • Input rectification • Vishay Semiconductors switches and output rectifiers

Contextual Info: 8ETU04 Vishay High Power Products Ultrafast Rectifier, 8 A FRED PtTM FEATURES • Ultrafast recovery time Base cathode • Low forward voltage drop 2 • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level

721f

Abstract: ci 7445 TLP421 TLP 7445 TLP521 TLP521 SOP tlp421-4 TA4011FU TA4016AFE TLP621
Contextual Info: 東芝半導体情報誌アイ 2000 1･2月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 eye 2000年1･2 u c to r 月号 d n co i Vo m l.9 Se 1 CONTENTS INFORMATION

40ETS12

Contextual Info: VS-20ETS16PbF, VS-20ETS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Base cathode 2 • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 2 3 1 TO-220AC

Contextual Info: 15TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 15 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency

Contextual Info: VS-15ETH06HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A Fred Pt FEATURES • Hyperfast recovery time Base cathode 2 • Low forward voltage drop • 175 °C operating junction temperature 2 • Low leakage current 3 1 • Single die center tap module

Contextual Info: VS-15ETL06HN3 www.vishay.com Vishay Semiconductors Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature • Low leakage current

Contextual Info: 18TT045-F Vishay High Power Products High Performance Schottky Generation 5.0, 18 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency

Square Bridge Rectifier

Abstract: 20ETS12 20ETS 20ETS08
Contextual Info: 20ETS. High Voltage Series Vishay High Power Products Input Rectifier Diode, 20 A DESCRIPTION/FEATURES Base cathode The 20ETS. rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable

12TQ

Abstract: 12TQ035 12TQ040 12TQ045 40HFL40S02 IRFP460
Contextual Info: 12TQ. Series Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation Base cathode 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

30ETH06

Abstract: IRFP250 30ETH06PBF
Contextual Info: 30ETH06PbF Vishay High Power Products Hyperfast Rectifier, 30 A FRED PtTM FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS directive 2002/95/EC

Contextual Info: VS-HFA25TB60HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization:

20ETF

Abstract: 20ETF06
Contextual Info: 20ETF.PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION The 20ETF.PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.

Contextual Info: VS-15ETH03PbF Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES Base cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 Cathode TO-220AC • Compliant to RoHS Directive 2002/95/EC

VS-30ETH06PBF

Contextual Info: VS-30ETH06PbF Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Base cathode 2 • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current 1 Cathode TO-220AC 3

VS-20L15TPBF

Contextual Info: VS-20L15TPbF, VS-20L15T-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES • 125 °C TJ operation VR < 5 V Base cathode 2 • Single diode configuration • Optimized for OR-ing applications • Ultra low forward voltage drop TO-220AC