9500A Search Results

LAN7500

Abstract: magnetic less ethernet LAN9500 ethernet LAN9500A turbo mii VxWorks LAN9500/9500A
Contextual Info: LAN9500/9500A Hi-Speed USB 2.0 to 10/100 Ethernet Controllers SMSC’s LAN9500 and 9500A Hi-Speed USB 2.0 to 10/100 Ethernet controllers provide a high-performance, cost-competitive USB to Ethernet connectivity solution containing an integrated 10/100 Ethernet PHY, Hi-Speed USB 2.0 PHY, Hi-Speed USB 2.0

HV9804

Abstract: HV9803 ahv9500d HV8601 HV8701 9201A
Contextual Info: HYPERABRUPT TUNING VARACTORS A S I’s silicon Hyperabrupt Tuning Varactors are highly reproducible ion-implanted devices for use at HF, VHF, UHF and M IC R O W A VE frequencies. Applications Include: HF - For tuning LC resonant circuits up to 100 M Hz and wide deviation

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

3000HXD22

Abstract: 3000HXD
Contextual Info: TOSHIBA 3000HXD22 TOSHIBA ALLOY-FREE RECTIFIER 3000HXD22 RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm —5000V Average Forward Current : Ijr AV = 3000A Flat Package M A X IM U M RATINGS SYMBOL RATING UNIT CHARACTERISTIC V Repetitive Peak Reverse Voltage

DIM2400ESS12-A000

Abstract: DIM2400ESS12-A
Contextual Info: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-2 DS5840-3 August 2014 LN31870 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max) IC(PK)

ESM 310

Abstract: DIM2400ESS12-A000
Contextual Info: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

lm 124 ic

Abstract: ESM 310 DIM2400ESM12-A000
Contextual Info: DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-3.0 DS5536-4 October 2010 LN27615 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Contextual Info: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

Contextual Info: 3000HXD22 TO SHIBA TOSHIBA ALLOY-FREE RECTIFIER 3000HXD22 RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 5000V Average Forward Current : Ip AV = 3000A Flat Package MAXIMUM RATINGS SYMBOL RATING UNIT CHARACTERISTIC 5000 V Repetitive Peak Reverse Voltage

3TF6

Abstract: 5611A B siemens softstarter wiring diagram 3RW40 3RP15 05-1AP30 1KB4
Contextual Info: SIRIUS Datasheet 2009 Low Voltage Controls & Distribution Answers for industry. s Pressing, equipping, transporting. These functions run in many automated production environments. You’ll find everything that you need to switch, protect and start motors with the extensive portfolio of the modular SIRIUS system.

DIM2400ESM12-A000

Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003

DIM2400ESM12-A000

Abstract: DIM2400ESM12-A
Contextual Info: DIM2400ESM12-A000 Single Switch IGBT Module Replaces DS5536-4 DS5536-5 August 2014 LN31869 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)

50A 1200V SCR

Abstract: NTE5386 NTE5387
Contextual Info: NTE5386 & NTE5387 Silicon Controlled Rectifier SCR for High Speed Switching, 700 Amp, TO200AC Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Contextual Info: TOSHIBA 3000HXD22 TOSHIBA ALLOY-FREE RECTIFIER 3 n n n n Y n 3 ? RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage : Vr r m —5000V • • • T V , , A T7-X — Q rtH A A -r ^ v ; —- - - - - Flat Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING

DIM2400ESM12-A000

Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5536-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

MICROWAVE ASSOCIATES ISOLATOR

Abstract: 104020006
Contextual Info:  BROADBAND MICROWAVE COMPONENTS & TEST EQUIPMENT www.krytar.com 1288 Anvilwood Avenue Sunnyvale, CA 94089 408 734-5999 FAX (408) 734-3017 Toll Free 1 (877) 734-5999 KRYTAR, founded by Thomas J. Russell in 1975, is a privately owned California corporation specializing in the manufacture of ultra broadband microwave components

Contextual Info: TOSHIBA 3000EXD22 TOSHIBA ALLOY-FREE RECTIFIER 3000EXD22 RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —2500V Average Forward Current : Ip AV = 3000A Flat Package MAXIMUM RATINGS SYMBOL RATING UNIT CHARACTERISTIC V Repetitive Peak Reverse Voltage

Contextual Info: NTE5386 & NTE5387 Silicon Controlled Rectifier SCR for High Speed Switching Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM, VRRM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

3000EXD22

Contextual Info: TOSHIBA 3000EXD22 TOSHIBA ALLOY-FREE RECTIFIER 3000EXD22 RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —2500V Average Forward Current : I f A V ~ 3 0 0 0A Flat Package MAXIMUM RATINGS SYMBOL RATING UNIT CHARACTERISTIC V Repetitive Peak Reverse Voltage

LM 13500

Abstract: DIM2400ESM12-A000
Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003

135C

Abstract: 72V36110 DATE CODE 72V3690 72V3640
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F0001-01 Product Affected: 72v2114Z DATE: January 21, 2000 Product Family: FIFO MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark 72v2101, 72v2111, 72v295, 72v2105, 72v263, 72v273,

LM 13500

Abstract: DIM2400ESM12-A000
Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM2400ESM12-A000

Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003

Contextual Info: TO SHIBA 3000EXD22 TOSHIBA ALLOY-FREE RECTIFIER 3000EXD22 RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 2500V Average Forward Current : Ip AV = 3000A Flat Package MAXIMUM RATINGS SYMBOL RATING UNIT CHARACTERISTIC V Repetitive Peak Reverse Voltage