LN27616 Search Results

ESM 310

Abstract: DIM2400ESS12-A000
Contextual Info: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)

Contextual Info: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)