94GHZ Search Results

10 GHz gunn diode

Abstract: millimeter gunn diode
Contextual Info: AFC378 G aAs FLIP CHIP S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz typ. . Low capacitance : CT0 = 0.032 pF Extremely rugged. Passivated planar construction. High reproducibility of parasitics. A P PL IC A TI O N S

missile seeker

Abstract: AH901 Gunn oscillator InP AH904 seeker AH902
Contextual Info: AH901.AH904 InP G U N N P O W E R G E N E R A T I O N D I O D E S APPLICATIONS FEATURES hign ernciency Local oscillator links missile seeker radars 94GHz operating frequency High CW power level Low FM and AM noise DESCRIPTION M illim eter-wave InP GUNN diodes are vapor

APX378

Abstract: C116
Contextual Info: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency

Contextual Info: PSHGEC plessey D S3343-13 DA1392 MILLIMETRE WAVE BALANCED MIXER The DA1392 is a Millimetre Wave Balanced Mixer. FEATURES • 90 to 98GHz Coverage Available ELECTRICAL CHARACTERISTICS @ 25°C P aram eter Signal Frequency Range Signal Bandwidth IF Range Conversion Loss

Contextual Info: PjpH G E C P L E S S E Y DS3341-1.3 DA1390 Series MILLIMETRE WAVE BALANCED MIXERS The D A 1390 S eries of devices are M illim etre W ave Balanced Mixers. ELECTRICAL CHARACTERISTICS @ 25°C FEATURES • 90 to 98GHz Coverage Available ■ Low Conversion Loss

Contextual Info: n i G E C PLESSEY DS3342-1.3 DA1391 MILLIMETRE WAVE BALANCED MIXER The DA1391 is a Millimetre Wave Balanced Mixer. FEATURES • 90 to 98GHz Coverage Available ELECTRICAL CHARACTERISTICS @ 25°C ■ Low Conversion Loss ■ Small Size Param eter Signal Frequency Range

Contextual Info: 37bflSE2 ODlflSll hb4 « P L S B GEC PLESSEY S E M I C O N D U C T O R S DC1860 PLANAR DOPED BARRIER W BAND MICROSTRIP COPLANAR MIXER DIODE Planar doped barrier PDB coplanar mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at tow local oscillator

Contextual Info: PBti g e c plessey DC1860 PLANAR DOPED BARRIER W BAND MICROSTRIP COPLANAR MIXER DIODE Planar doped barrier PDB coplanar mixer diodes represent a major advancement in mixer/detector technology. These diodes otter good conversion loss at low local oscillator

gunn diode generator

Contextual Info: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.

gunn diodes

Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Contextual Info: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

DGB8332

Abstract: DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521
Contextual Info: 0585443 ALPHA IN D / SEM ICONDUCTOR DE | DSflS443 ODODS Eb 03E 00526 ôj~ft D 3 Gunn Diodes Features • • • • • • ä j Spot Frequency or Wideband Operation Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications

inp hemt power amplifier

Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
Contextual Info: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface

CGY2108GS

Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Contextual Info: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services