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Abstract: SSG9435
Contextual Info: SSG9435 -5.3A, -30V,RDS ON 50mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG9435 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
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Abstract: SSG9435 53a3
Contextual Info: SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 55 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low
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Abstract: SSG9435 10-Aug2010 9435 53a3
Contextual Info: SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 55 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low
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Abstract: 9435 WTK9435 diode EB 42A 9435s
Contextual Info: WTK9435 Surface Mount P-Channel Enhancement Mode MOSFET 7 -5.3 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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Abstract: diode EB 42A WTK9435
Contextual Info: WTK9435 DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V
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