9376 Search Results

AN-994

Abstract: IRF840LC IRF840LCL IRF840LCS
Contextual Info: PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V RDS on = 0.85Ω

AN-994

Abstract: IRG4BH20K-L IRG4BH20K-S
Contextual Info: PD - 93764 PRELIMINARY TO-263 IRG4BH20K-S, TO-262 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Very low turn off losses • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V

basic rectifier

Abstract: EIA-541 IRF7807D1 MS-012AA OA 207 diode
Contextual Info: PD- 93761 International IQ R Rectifier IRF7807D1 FETKY iHOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses

50V Dual N-Channel HEXFET Power MOSFET in a SO-8

Abstract: EIA-541 IRF7530
Contextual Info: PD-93760C IRF7530 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

13A40

Contextual Info: PD-93760 IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

IRF7530

Abstract: 2920A 8D12
Contextual Info: PD-93760A IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

IRF7807D1

Contextual Info: PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

ZSP2-204

Abstract: ZSP2-230 high silicon cast iron anode specifications and ZP108000-113 Zero Manufacturing ZP20085 ZP20653-1 CP6001 ZSP2-210 MIL-STD-2219
Contextual Info: zero Knows C A R R Y I N G C Contact ZERO 800-500-ZERO 9376 or Email sales@zerocases.com information A S E S z e r o k n o w s . s o l u t i o n s ! In practice, ZERO Manufacturing produces metal and plastic cases, containers and enclosures. But in truth, our products are protection solutions—ensuring the safe transport and

IRF7326D2

Abstract: IRF7101
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

Contextual Info: PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V RDS on = 0.85Ω

IRG4IBC10UD

Contextual Info: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

hexfet power mosfets international rectifier

Abstract: Si4435DY MS-012AA
Contextual Info: PD- 93768A International I R Rectifier SÌ4435DY HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -3 0 V R ü S o n = 0.020Q. Description T hese P-channel HEXFET® Pow er M O SFETs from

SILICON CONTROL RECTIFIER DETAILS

Abstract: MAV-3 EIA-541 IRF7807D2 DMX 5S DIODE marking 7AA
Contextual Info: PD- 93762 International IQ R Rectifier IRF7807D2 FETKY ÜHOSFET / SCHOTFKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses

IRF7807D2

Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

IRG4IBC10UD

Contextual Info: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

Contextual Info: PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter

OA 207 B diode

Abstract: EIA-541 IRF7501 IRF7530
Contextual Info: PD-93760 International IOR Rectifier IRF7530 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low O n-R esistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile <1.1 mm A vailable in Tape & Reel Vdss = 20V RüS(on) = 0.030Î2

EIA-541

Abstract: IRF7530 mosfet 500V 50A
Contextual Info: PD-93760C IRF7530 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

Contextual Info: PD- 93768 Si4435DY PRELIMINARY HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

IRG4BAC50W

Contextual Info: PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for switch-mode power supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

1N3768

Contextual Info: ilicon P ow er R e c t i f i e r \I1 183—1rNJ1190, 93765-1 93768 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes i r E 1 Notes: 1. Full th re ad s within 2 1 /2 th re ad s 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

MS-012AA

Abstract: Si4435DY
Contextual Info: PD- 93768A Si4435DY HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from