92500TS Search Results
92500TS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SA1882
Abstract: 2SC4984 ITR04972 ITR04973 ITR04974
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ENN4633A 2SA1882/2SC4984 2SA1882/2SC4984] 25max 2SA1882 2SA1882 2SC4984 ITR04972 ITR04973 ITR04974 | |
EC3H06B
Abstract: TA248
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ENN6524 EC3H06B EC3H06B] S21e2 11GHz 1006size) E-CSP1006-3 EC3H06B TA248 | |
K2530
Abstract: 2SK2530 64063
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ENN6406 2SK2530 2083B 2SK2530] 2092B K2530 2SK2530 64063 | |
2SJ416
Abstract: FX856 SB07-03P 53723
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ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, SB07-03P 53723 | |
2SA1882
Abstract: 2SC4984 ITR04972 ITR04973
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2SA1882 2SC4984 EN4633B 2SA1882 2SC4984 ITR04972 ITR04973 | |
SDA 5450
Abstract: SQFP208 CCIR601 LC74981W
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LC74981W LC74981WNTSC/PALXGALSI 480P/480I) SQFP208 SANYOSQFP208 92500TS B8-5554 YIN70 YCbCrCCIR601 SDA 5450 SQFP208 CCIR601 LC74981W | |
Contextual Info: Ordering number:ENN5436A NPN Epitaxial Planar Silicon Transistor TS4162 VHF Band Low-Noise Amplifier and OSC Applications Package Dimensions • Low noise : NF=1.8dB typ f=150MHz . · High gain : S21e2=16dB typ (f=150MHz). · Ultrasmall package facilitates miniaturization in end |
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ENN5436A TS4162 150MHz) S21e2 TS4162] | |
Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One |
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ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, | |
EC3H02BContextual Info: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz . |
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ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B | |
2sd2635
Abstract: TA-2846
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ENN6449 2SD2635 2SD2635] 2sd2635 TA-2846 | |
marking YDContextual Info: Ordering number:ENN6362 N-Channel Silicon MOSFET 3LN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LN02C] 0.5 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain |
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ENN6362 3LN02C 3LN02C] marking YD | |
2097B
Abstract: 2SC4520 FP207 marking 207
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ENN6457 FP207 2097B FP207] 25max FP207 2A1729 2097B 2SC4520 marking 207 | |
EC3H06BContextual Info: Ordering number : ENN6524 SANYO Semiconductors DATA SHEET EC3H06B NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). |
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ENN6524 EC3H06B S21e2 11GHz 1006size) EC3H06B | |
EC3H02BContextual Info: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz . |
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ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B | |
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