9145 Search Results

IRG4BC30UD

Contextual Info: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC30FD

Abstract: diode bridge LT 405
Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

ZMG2201-M

Abstract: ZMG2202-11 ZMG2203-11 ZMG2203-M ZMG2206-M ZMG22R5-11 zmg-m
Contextual Info: 9145_ZMG 1/2 EMC Components ZMG-11, ZMG-M Series EMC Filters for AC Power Supply Cased (Compact Size) FEATURES • The ZMG series EMC filters exhibit outstanding attenuation characteristics with respect to both differential mode and common- mode noise components in the MF and HF bands.

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Artikel Nr.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9145661054 Artikel: MK14-1A66E-500W Magnetische Eigenschaften Anzug Prüfmittel Bedingung

SA002

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9145711024 Item: MK14-1A66E-200W MK14-1A71E-200W Magnetic properties Pull-In Test equipment Conditions

IRG4BC30U

Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC40S

Contextual Info: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC30F

Contextual Info: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC40F

Contextual Info: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC40U

Contextual Info: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

P9145

Contextual Info: P#9145-r1_485SD9TB-0812-1/2 B& B ELECT RON I CS M ode l 4 8 5 SD9 T B Port -Pow e re d RS-4 8 5 Conve rt e r The 485SD9TB is a port-powered two-channel RS-232 to RS-485 converter. It converts the TD and RD RS-232 lines to balanced half-duplex RS-485 signals. The unit is powered from the RS-232 data and handshake lines whether the lines

ic AM 12A

Abstract: IRG4BC30U
Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

ic c 838

Abstract: IRG4BC40S
Contextual Info: PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Item No.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9145902054 Item: MK14-1B90E-500W Magnetic properties Pull-In Test equipment Conditions Min Typ

IRG4PC30F

Contextual Info: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC30UD

Abstract: ir*c30ud
Contextual Info: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC30FD

Abstract: fl 014
Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: HERMETIC SEAL LAUNCHERS FOR .015" DIAMETER PINS S tr a ig h t Jack 1 /2 " S quare Flange 9045 9513-001 - Optional packaging: 9145 9513-001 Includes 920-82 9245 9513-001 (Includes 920-82 and 907-111-5) 9345 9513-001 (Includes 907-111-5) - - S tra ig h t Jack

raychem heat shrinkable tube

Abstract: raychem termination instructions A 45071 IEC 168 insulator raychem heat shrink terminations el wire heat shrink tubing
Contextual Info: PD 0102/c Rev. 15 13.08.00 ELAM Ltd P.O.B. 45071, Jerusalem 91450, Israel Phone: 972-2-532-8888 Fax: 972-2-532-8889 Product Specification Heavy Duty EL Wire 02S series Common Characteristics* Overall Diameter Storage Conditions: Temperature Humidity R.H.