9114 STATIC RAM Search Results

VDR 20-100

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs

2114 Ram pinout 18

Contextual Info: MWS5114 H A R R IS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM February 1992 Description Features • Fully Static Operation • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 404S Types • Common Data Input and Output

9114 RAM

Abstract: 9114 static ram AM9124 RAM 9114 AM9114 91L14 2114 static ram AM9114C KS000010 AM91L14B
Contextual Info: a Advanced Micro Devices A m 9 1 1 4 /A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 rts Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V

AM91L148

Abstract: 9114 RAM AM81H 91L14
Contextual Info: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V

91L14

Abstract: cd018 ST 9114 Am91L14
Contextual Info: a Am9114/Am91 L14 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 ns Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V TTL-kJentical input/output levels

91l14

Abstract: RAM 9114 AM9124 AM91L14C 9114 RAM AM9114 9114 static ram STATIC RAM 2114 AM9114E AM9114B
Contextual Info: A m 9 1 1 4 / A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating and standby power A ccess times down to 200 ns Am9114 is a direct plug-in replacement for 2114 High output drive: 3.2-mA sink current TTL-identical input/output levels

Am91L24

Abstract: AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124 Am9124/Am9114 am91l14 am91l24 AM9124B
Contextual Info: Am9114/9124 Am9114/9124 1024 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 Am9124 pin and function compatible with Am9114 and 2114, plus 5 3 power-down feature

Contextual Info: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in

Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in

2114 Ram pinout 18

Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Contextual Info: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

Contextual Info: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,

memory ic 2114

Abstract: 5114E
Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in

2114 Ram pinout 18

Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

Contextual Info: _CYM1822 T SEMICONDUCTOR 16K x 32 Static RAM Module with Separate I/O Features Functional D escription • High-density 512K-bit SRAM module The CYM1822 is a high-performance 512-kbit static RAM module organized as 16K words by 32 bits. This module ¡»con­

HC9115

Abstract: diode 119 HC9114 74*9114 hc911 MC74HCXXXXN AS813 74HC9115
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1 MC54/74HC9114 MC54/74HC9115 Product Preview N in e -W id e S c h m itt-T rig g e r B u ffe rs w ith O p e n -D ra in O u tp u ts J SUFFIX C E R A M IC CASE 732 H ig h -P e r fo r m a n c e S ilic o n -G a te C M O S

ay-5-8100

Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
Contextual Info: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

32c93

Abstract: tda 9116 tda 9116 tda 9115
Contextual Info: SSI 32C9023 SCSI Combo Controller 80 Mbit/s; dual bit NRZ interface ómconspkms’ A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32C9023 is an advanced CMOS VLSI device which integrates major portions of the hardware needed

TDA 9115

Abstract: tda 9114 ba1s tda 9116 sdb01 tda 9116 tda 9115 32R2110 32D4680 msi 9121
Contextual Info: SSI 32C9023 M c o t iM b n S SCSI Combo Controller 80 Mbit/s; dual bit NRZ interface ' A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32C9023 is an advanced CMOS VLSI device which integrates major portions of the hardware needed

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

CY7C911

Abstract: 7c909
Contextual Info: CY7C909 CY7C911 CYPRESS SEMICONDUCTOR CMOS Micro Program Sequencers • Capable o f withstanding > 2001V stat­ ic discharge voltage Features • Fast — C Y7C909/U has a 30-ns min. clock-to-output cycle time (com­ mercial and military) • Low power — I(X (max.) = 55 mA (commercial

interfacing of 8279 devices with 8085

Abstract: 8085 microprocessor ram 4k processor 8048 intel 8031 instruction set p8031 automatic room light controller 8051 interfacing of RAM and ROM with 8085 8031 interfacing to rom md8031 intel 8031 addressing modes
Contextual Info: 8051/8031 Single-Chip 8-Bit Microcomputer 8031 - Control oriented CPU with RAM and IO GENERAL DESCRIPTION 8051 - An 8031 with factory mask-programmable ROM The 8051/8031 are members of a family of advanced single-chip microcomputers. The 8051 contains 4K x 8

NEC uPD7210

Abstract: TMS9914 NAT7210APD 9914 mode NAT7210 IC 75162 scpi parser NAT9914 application note NAT7210a
Contextual Info: NAT7210 TM Reference Manual June 1995 Edition Part Number 320744B-01 Copyright 1994, 1995 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203

NEC uPD7210

Abstract: uPD7210 NAT7210APD PD7210 NAT7210 Transistor ST 9422 NAT9914 application code TMS9914 TMS9914A 9914A
Contextual Info: NAT7210 TM Reference Manual June 1995 Edition Part Number 370875A-01 Copyright 1994, 1995 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203