905 NM INFRARED EMITTING DIODE Search Results

LED905_35_22

Contextual Info: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation

Contextual Info: Pulsed Laser Diode Module LC-Series DESCRIPTION The LC-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger

Contextual Info: Laser Diodes Pulsed Laser Diode Module LS-Series Description The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply

7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger

Contextual Info: Pulsed Laser Diode Module LS-Series DESCRIPTION The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger

Contextual Info: pulSed฀laSer฀diodeS฀and฀infrared฀ledS฀ iredS ฀ HIGH POWER Pulsed Laser Diodes PGA – PGEW Series LASER DIODES FOR RANGE FINDING Pulsed Laser Diodes – PGA – PGEW Series applications • Range inders • Safety light curtains • Adaptive cruise control

Contextual Info: Pulsed Laser Diodes and Infrared LEDs IREDs HIGH POWER Pulsed Laser Diodes PGA – PGEW Series LASER DIODES for Range Finding Pulsed Laser Diodes – PGA – PGEW Series Applications • Range finders • Safety light curtains • Adaptive cruise control

RLT905-100GS

Abstract: 905 nm Infrared Emitting Diode SOT-148
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-100GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode

RLT905-500G

Abstract: 905 nm Infrared Emitting Diode PIN photodiode 500 nm 2 Wavelength Laser Diode photodiode 011
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-500G TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: multi mode

laser diode mosfet triggering circuit

Abstract: PULSED LASER DIODE DRIVER spl pl90 0 ll90_3 SPL LL90 SPL PL90_3 2 Wavelength Laser Diode mosfet triggering circuit adaptive cruise control laser diode lifetime
Contextual Info: Opto Semiconductors Overview: OSRAM Opto Semiconductors Pulsed Laser Diodes 1. Applications of high power pulsed laser diodes OSRAM Opto Semiconductors pulsed laser diodes provide high power tens of watts short (several nanoseconds) optical pulses in the near infra-red regime.

905 nm Infrared Emitting Diode

Abstract: RLT905-300GS
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-300GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode

Contextual Info: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS

Contextual Info: High Power Pulsed Laser Diodes 905-Series Features - Single and stacked devices up to 130 Watts - Proven AlGaAs high reliability structure - 1 W/A efficiency with 25° beam divergence - Excellent temperature stability - Hermetic and custom designed package

Contextual Info: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS

Contextual Info: High Power Pulsed Laser Diodes 905-Series FEATURES ƒ ƒ ƒ ƒ ƒ Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package

Contextual Info: Laser Diodes High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Multi-junction devices up to 75 W 75 µm, 150 µm and 225 µm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure

QEB373

Abstract: QSB363
Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs

QEB373

Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs

QEB373

Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 875nm, AlGaAs

LP30R

Abstract: I627
Contextual Info: HLP20R, HLP30R, HLP40R Infrared Emitting Diodes IRED Description H L P 2 0 R , H LP 30R and H LP 40R are G a A lA s infrared em itting diodes with single heterojunction structure. They offer a wide range o f wavelength and ou t­ put pow er, and are suitable for various types o f

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES ƒ Multi-junction devices up to 75 W ƒ 75 m, 150 μm and 225 μm source size ƒ 2.6 W/A efficiency ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far

905D1S

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES • Multi-junction devices up to 40 W • Proven InGaAs / GaAs high reliability structure  High power multi-junction structure for narrow far field  Excellent temperature stability  Hermetic and custom designed package

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package