9000 044 053 Search Results

20PM4

Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

sem 2105 16 pin

Abstract: sem 2105
Contextual Info: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold

40106B

Abstract: 4093B equivalent 4041UB 4048B 4069UB 9204 4099B 9201 9306
Contextual Info: RADIATION HARDENED PRODUCTS Radiation Hardened versions of HCC 4000 series types are offered by SGS-THOMSON for special applications in Space, Biomedical and Military fields. These devices are supplied in accordance to the relevant Hi-Rel processing and screening specifica­

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

FET 913

Abstract: FLK107XV
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: TYPE TCG Computer Grade Aluminum Electrolytic Capacitors FEATURES: • High Voltage • High Capacitance • High Ripple Currents The TCG capacitor manufactured by Aerovox is a tubular version of the larger screw mount CGS computer grade capacitor. The excellent electrical stability and long operating life

NE674

Abstract: NE67483 NE67483B
Contextual Info: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

TRANSISTOR D434

Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

uc 3808

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FLK107XV

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

AIUR-02H

Abstract: AIRD-03-821K AIRD-02-2R2K AIUR-02L marking 333j HP 4343B AIUR-03-2R2K AIRD-01-471K
Contextual Info: THROUGH-HOLE RADIAL SHIELDED RF CHOKES AISR- 01 FEATURES: OPTIONS: COMMON APPLICATIONS: • • • • • • • Bulk Packaging is Standard • Tolerance: 5% is Standard • • • • • Wire-wound Construction Ferrite Shield Excellent Heat Resistance

AIMT-01-100-2

Abstract: AIMT-01-100-2.5 AIMT-01-43 AIMT-01-25
Contextual Info: VERTICAL / HORIZONTAL TOROIDAL COILS AIMT-01 FEATURES: OPTIONS: COMMON APPLICATIONS: • • • • • • • Bulk Packaging is Standard • Tolerance: 20% is Standard Tighter Tolerances Available • Mounting: V ertical is Standard, (H)orizontal Available

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

Contextual Info: Agilent N5435A Infiniium Server-Based License for Infiniium Oscilloscopes Data Sheet The Agilent N5435A Infiniium serverbased license allows you to move your scope application license from one Infiniium oscilloscope to another, using a license server. Just check out the

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B NE71383
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

5T6184

Abstract: P009 RAYCO ELECTRONICS RAYCO ELECTRONICS MANUFACTURING
Contextual Info: Power Inductors 1. Low profile, transfer mold surface-mount package 2. Four sizes; leaded and leadless configurations 3. Ideal for automatics insertion 4. Weight of 0.5 to 5 grams PHOTO 5. Built to meet MIL-PRF-27 specifications., Grade 5, Class S 6. Operating temperature range: -55? to +130? .

Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general

FLX107MH-12

Contextual Info: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general