90 P 6 PIN MOSFET Search Results

Contextual Info: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information

TSM9435

Abstract: 27BSC TSM9435CS
Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology

Contextual Info: Preliminary TSM443K12 20V P-Channel MOSFET with Schottky Diode MSOP-8 Pin Definition: 1. Anode 5. Cathode 2. Anode 6. Cathode 3. Source 7. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 Features ID (A) 90 @ VGS = -4.5V -3.3 130 @ VGS = -2.5V

Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology

TSM3441

Abstract: TSM3441CX6
Contextual Info: TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 90 @ VGS = -4.5V -3.3 110 @ VGS = -2.5V -2.9 Block Diagram ● Advance Trench Process Technology

block diagram of schottky diode

Abstract: P-Channel MOSFET code 1A TSM443K12
Contextual Info: TSM443K12 20V P-Channel MOSFET with Schottky Diode MSOP-8 Pin Definition: 1. Anode 5. Cathode 2. Anode 6. Cathode 3. Source 7. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 Features ● ● ID (A) 90 @ VGS = -4.5V -3.3 130 @ VGS = -2.5V -1.2

Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(m) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram  Advance Trench Process Technology 

TSM4433

Abstract: TSM4433CS MOSFET P-channel power mosfet marking A07 27BSC
Contextual Info: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram  Advance Trench Process Technology

27BSC

Abstract: TSM4433D Dual P-Channel MOSFET
Contextual Info: TSM4433D 20V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V

Dual P-Channel MOSFET 30v

Abstract: 27BSC TSM4953D TSM4953DCS
Contextual Info: TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -30 Features ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 Block Diagram

Contextual Info: TSM4433D 20V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 1 1 2 2 -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V

27BSC

Abstract: TSM4953D
Contextual Info: TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 Block Diagram

TSC 745

Contextual Info: TSM4953D 30V Dual P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 VDS V RDS(on)(mΩ) ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 -30 Features Block Diagram

pF3900

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

RA60H1317M1A

Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

IXDI402PI

Abstract: IXDI402SI IXDI402SIA IXDI402SIA-16 IXDN402PI IXDN402SI IXDI402SI-16 IXDN402SI-16 IXDN402SIA IXDN402SIA-16
Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

IXDN402SIA

Abstract: IXDN402 IXDN402PI IXDN402SI SOIC-16 IXDF402SIA
Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

IXDD402

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

ixdd402

Abstract: IXDN402SI IXDF402SIA IXDN402 IXDN402PI IXDN402SIA SOIC-16
Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak

Igg22

Contextual Info: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.

LT 7210

Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RA55H4452M

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to