8MX32 DRAM Search Results

ED07

Abstract: ED16-23 TMS320C671
Contextual Info: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

ED16-23

Abstract: TMS320C TMS320C6000 WED3DL328V
Contextual Info: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

Contextual Info: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V a1011
Contextual Info: White Electronic Designs WED3DL328V 8Mx32 SDRAM FEATURES DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by

Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V
Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer

8Mx32

Contextual Info: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 3280AsEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 3280AsEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 8Mx8

Contextual Info: FMD4B32LBx–30Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–30Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008

512MB 8Mx32 DDR DRAM

Contextual Info: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,

DRAM 8Mx32 tsop

Contextual Info: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: SU532083574F0BP May 11, 2005 Ordering Information Part Numbers Description SM532083574F0BP 8Mx32 32MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100, CL 2.0 & 3.0, 25.40mm. SG532083574F0BP 8Mx32 (32MB), SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, PC100,

328006EDM4G04TC

Abstract: 4096-cycle
Contextual Info: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 32800sEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 32800sEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 4Mx16

Contextual Info: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008

HYM532814CM

Abstract: HY5117404C HYM532814C HYM532814CMG
Contextual Info: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: FMD4B32LBx–30Ax 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–30Ax Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008

HYM532810BM

Abstract: HY5117400B HYM532810B HYM532810BMG
Contextual Info: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HY5117404C

Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
Contextual Info: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HY5117400C

Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
Contextual Info: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HYM532814BM

Abstract: HY5117404B HYM532814B
Contextual Info: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

8mx32 simm 72 pin

Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
Contextual Info: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.

Contextual Info: »"HYUNDAI > • H YM 5 3281 4B M -S eries 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.1 uF and 0.01 nF

Contextual Info: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

328006-S52T16JD

Abstract: 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM
Contextual Info: 8M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 328006-S52T16JD 72 Pin 8Mx32 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Fast Page Mode