8KX8BIT Search Results

HY6264Alj-70

Abstract: hy6264a HY6264ALP-70
Contextual Info: HY6264A-0 Series • • H Y U N D A I 8Kx8bit CM OS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6264A

Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A-0 Series • ' H Y U N D A I 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A- I Seríes -HYUNDAI 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability

cdip28pin

Contextual Info: BR6265 BR6265 8KX8Bit64Ksram • £M5>r3E0/Dimensions Unit : mm BR6265 (i, 8 K X 8 tf CMOS X $ x -f "j v 0 RAM 7 t o TTL ¿ ¡ U g W ^ T '- T o h C M O S x /W ^ ic T ', $ » « ) £ £ 2 V IC T If T 1 9 - 2 JW S & T t i t c t b , A' 7 x U - a ' 7 7 T v -J

HY6264ALP-70

Abstract: HY6264A HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP
Contextual Info: HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION minimize current drain is unnecessary for the HY6264A Series. The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process

HY6284A

Contextual Info: •HYUNDAI H Y 6 2 6 4 A - i 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

BR6265A-10LL

Abstract: BR6265A BR6265AF10LL BR6265AF-10LL BR6265A-10LL/BR6265AF-10LL
Contextual Info: BR6265A-10LL/BR6265AF-10LL BR6265A-10LL BR6265AF-10LL 8KX8Bit 64K SRAM • ^ JférfjiE l/D im en sio n s Unit : mm BR6265A/AF l i , 8 K X 8 t ' y h «IJ& <D CMOS 7, 9 x •i -j0 RAM T' t o A U flliT T L v 'J h CMOS 7*/^ ■ ÌX & W T', 2 V C " R i T b T - ? fr'fS ftT ' % 2 tz » , a' "jt U - /< y ?

LM33256

Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Contextual Info: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns

p627

Abstract: 8Kx8bit
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S07-12501-4E 8-bit Proprietary Microcontroller F2MC-8L MB89620 Series MB89PV620 DESCRIPTION The MB89620 series has been developed as a general-purpose version of the F2MC*-8L family consisting of

A1201

Abstract: LE24LB642M USP6947325 6 PIN EEPROM h64K
Contextual Info: 注文コード No. N A 1 2 0 1 CMOS LSI LE24LB642M Two Wire Serial Interface EEPROM 64k EEPROM 概要 LE24LB642M は 2 線式シリアルインタフェース(I2C bus タイプ)EEPROM である。本製品は三洋 CMOS EEPROM 技術を採用することにより、高速動作、高信頼性を実現している。また、本製品のインタ

x28c010 msl

Abstract: EEPROM X28HC64P-12 X28HC64JI die X28HC64PI-90 EEPROM256K X28HC64PZ-12
Contextual Info: X28HC64 64K, 8K x 8 Bit Data Sheet June 7, 2006 5 Volt, Byte Alterable EEPROM FN8109.1 • High reliability —Endurance: 1 million cycles —Data retention: 100 years • JEDEC approved byte-wide pin out • Pb-free plus anneal available RoHS compliant

le25la642

Abstract: USP6947325 LE25LA642CS
Contextual Info: Ordering number : ENA1473 LE25LA642CS 64Kbit Serial SPI EEPROM SPI Bus Overview The LE25LA642CS is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

HT6264-70

Contextual Info: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • • • • Single 5V power supply Low power consumption – Operating: 200mW Typ. – Standby: 5µW (Typ.) 70ns (Max.) high speed access time Memory expansion by pin OE • Common I/O using tri-state outputs

HT6264-70

Abstract: A12C
Contextual Info: HOLTEK H r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • Single 5V power supply Low power consum ption - O perating: 200mW Typ. - Stan dby: 5|iW (Typ.) 70ns (M ax.) high speed access tim e M em ory expan sion by pin OE • • • • • Com mon I/O u sin g tri-state outputs

USP6947325

Contextual Info: Ordering number : ENA1471 LE25LB642CT Serial SPI EEPROM SPI Bus (64Kbit) Overview The LE25LB642CT is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

L9002DX2

Abstract: CIRCUIT DIAGRAM of slot jammer L9320 2.4GHz Cordless Phone circuit diagram DX220 WR 137 antenna Voice encryption L9002VX2 12-bytes
Contextual Info: Preliminary Data Sheet SATURN-II L9002DX2 CD/SS Wireless packet and voice communication processor Table of Content 1. GENERAL DESCRIPTION .3

LE25LB643

Abstract: USP6947325
Contextual Info: Ordering number : ENA1342 LE25LB643 Serial SPI EEPROM SPI Bus (64Kbit) Overview The LE25LB643 is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

SCK 085

Abstract: USP6947325 1800H1FFFH
Contextual Info: 注文コード No.N A 1 3 4 2 LE25LB643 Serial SPI EEPROM SPI Bus (64Kbit) 概要 LE25LB643 はシリアルペリフェラルインターフェース(SPI)対応の 64Kbit EEPROM である。本製品は 三洋 CMOS EEPROM 技術を採用することにより、高速動作、高信頼性を実現している。また、インター

2864b

Abstract: S-2860B S-2864B s286xb 2860B
Contextual Info: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.

Contextual Info: Rev.1.3_00 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.

tmm27256ad

Abstract: F000-FFFF TMP87P844N 87C844
Contextual Info: TO SHIBA TMP87P844 CM O S 8-BIT M ICRO CO NTRO LLER TMP87P844N The 87P844 are a One-Time PROM microcontroller with low-power 64K bits 8K bytes electrically programmable read only memory for the 87C444/844 system evaluation. The 87P844 is pin compatible with

8Kx8bit

Contextual Info: • DESCRIPTION The MB89620R series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers. In addition to the RMC-8L CPU core which can operate at low voltage but at high speed, the microcontrollers

A12C

Abstract: HT6264-70
Contextual Info: HOLTEK& n r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • O p e ra tin g voltage: 5V Low pow er consum ption - O peration: 200m W typ. - S tandby: 5(iW (typ.) 70ns (max.) high speed access tim e M em ory ex pansion by pin OE • • • • • P in -co m p atib le w ith s ta n d a rd 8Kx8