8KX8 SRAM Search Results

HM65664A

Abstract: SOJ28
Contextual Info: Temic Semiconductors Part Number Format Temperature Range °G H M 65664A -9 8Kx8 -40 to +85 4.5 to 5.5 35 to 55 5/100 2 to 30 75 to 100 HM 65664A -A 8Kx8 -40 t o +125 4.5 to 5.5 35 to 55 50/500 20 to 200 75 to 100 H M 65664A -2 CL65664 8Kx8 8Kx8 -55 to +125

Contextual Info: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.

Contextual Info: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN

EDI8808CB

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.

Contextual Info: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package

80C31 instruction set

Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
Contextual Info: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single

transistor D883

Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM
Contextual Info: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

UPAK

Abstract: static ram 8KX8 sram 8kx8 memory map
Contextual Info: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

EDI8808CB

Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
Contextual Info: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow

Contextual Info: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

ELECTRONIC DESIGNS INC 91 PAGE 343

Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
Contextual Info: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)

AS7C164-20PC

Abstract: AS7C164 000DM 7C164-12 7C164-10
Contextual Info: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption

A12C

Abstract: HT6264-70
Contextual Info: HOLTEK& n r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • O p e ra tin g voltage: 5V Low pow er consum ption - O peration: 200m W typ. - S tandby: 5(iW (typ.) 70ns (max.) high speed access tim e M em ory ex pansion by pin OE • • • • • P in -co m p atib le w ith s ta n d a rd 8Kx8

HT6264-70

Abstract: A12C 8Kx8bit
Contextual Info: HOLTEK HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • Com m on I/O u sin g tr i- s ta te o u tp u ts TTL com patible in te rfa c e levels F u lly s ta tic o p era tio n P in -co m p atib le w ith s ta n d a rd 8Kx8 b its of EPR O M /M A SK ROM 28-pin D IP /S D IP /SO P p ackage

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

AN923

Abstract: AN934 M48T559Y M48T59 M4T28-BR12SH1 SOH28 STATIC RAM 16x8 Z623
Contextual Info: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS

FF5H

Abstract: M4T28-BR12SH1 AN923 AN934 M48T559Y M48T59 SOH28 Z623
Contextual Info: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS

BD4822

Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized

Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

BD4822

Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized