8GHZ OSCILLATOR Search Results

Contextual Info: RFVC1802C RFVC1802C CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHz TO 8GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHz TO 8GHz Package: Module, 3 Connectors, 22.86mmx22.86mmx13.97mm Features  4GHz to 8GHz VCO 

t40c

Abstract: ma5250
Contextual Info: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Features  Wideband Performance  POUT =+4.0dBm Typical  External Resonator Not Required  Single Bias Supply: +5V at 53mA

12GHZ VCO

Contextual Info: RFVC1800C RFVC1800C Connectorized Module Wideband MMIC VCO with Buffer Amp, 8 GHz to 12GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMP, 8GHz TO 12GHz Package: Module, 3-Connectors, 22.86mmx22.86mmx13.97mm Features      8GHz to 12GHz VCO

8GHz oscillator

Abstract: RFVC1802 VCO BUFFER AMPLIFIER 8GHz RFVC RFVC1802PCK-410 RFVC1802S rfmd mmic QFN57
Contextual Info: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE V S =5V, T=25°C 10 7 Freq Evaluatio n Board Features  Wideband Performance

Contextual Info: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider

AK1548

Contextual Info: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider

D2120

Contextual Info: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider

ec6519

Contextual Info: JC6519/EC6519 INFORMATION C BAND P O W E R FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • • 30dBm output power at 1dB gain compression High associated gain: 9dB @8GHz Low source inductance High power added efficiency: 30% @8GHz

Contextual Info: TC5735 PRELIM INARY INFORM ATION C BAND POWER FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • 28dBm output power at 1dB gain compression High associated gain : 10dB @8GHz Low thermal resistance Low source inductance • High power added efficiency : 35% @8GHz

Contextual Info: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The

Contextual Info: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier 4GHz to 8GHz RFMD’s RFVC1802 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +18V VTUNE for frequency control. The

AK1548

Abstract: AK2360A
Contextual Info: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. 概要 AK1548 は 1GHz から 8GHz までの広い帯域をカバーする Integer-N 型の周波数シンセサイザです。精度の高いチャージポンプ レファレンス分周器、プログラマブルデバイダおよびデュアルモジュラスプリスケーラ P/P+1 で構成され、高性能、低雑音および小

Contextual Info: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier 4GHz to 8GHz RFMD’s RFVC1802 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +18V VTUNE for frequency control. The

Contextual Info: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The

Contextual Info: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB

Contextual Info: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB

RFUV1003

Abstract: RFUV1003PCK-410 rfuv-1003
Contextual Info: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB

MGF1801B

Abstract: Microwave power GaAs
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

k 1413 FET

Abstract: MGF1601B MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

k 1413 FET

Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package

MGF1601B

Abstract: mitsubishi microwave MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

MGF1601

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The

MGF1601B

Abstract: MGF1601
Contextual Info: < High-power GaAs FET small signal gain stage > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures