8GB 64 GBIT NAND FLASH Search Results

NAND512W3A 64MB

Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
Contextual Info: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system

NAND512B

Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
Contextual Info: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

block code error management, verilog

Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
Contextual Info: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array

USOP48

Abstract: VFBGA63 FBGA63 NAND08GW4B
Contextual Info: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

qualcomm

Abstract: block diagram of qualcomm MD2433-D8G-V3Q18-X-P X-GOLD 110 arm microprocessor data sheet PCI game port 512MB NOR FLASH Infineon X-GOLD 110 OMAP 4470 datasheet infineon x-gold
Contextual Info: mDOC H1 4Gb 512MByte and 8Gb (1GByte) High Capacity Flash Disk with NAND and x2 Technology Data Sheet, Rev. 1.1 Highlights „ mDOC H1 is one of the industry’s most efficient memory solutions for high capacity data and code storage, using 90 nm process

H27U4G8

Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000

Wear Leveling in Single Level Cell NAND Flash Memory

Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
Contextual Info: NAND04Gx3C2A NAND08Gx3C2A 4 Gbit, 8 Gbit 2112 Byte Page, 3V, Multi-level NAND Flash Memory Preliminary Data Features summary • High density multi-level Cell MLC NAND Flash memories: – Up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solutions for mass storage

JS29F08G08

Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
Contextual Info: Intel SS72 NAND Flash Memory JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 Product Features Organization: Basic NAND flash command set: Read performance: New commands: — — — Page size: x8: 2,112 bytes 2,048 + 64 bytes ; x16: 1,056 words (1,024 + 32 words)

block code error management, verilog

Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■

NUMONYX

Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■

JESD97

Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
Contextual Info: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage

LGA52

Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
Contextual Info: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage

F59L1G81A

Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

NAND Flash

Abstract: F59L1G81A
Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

1G NAND flash

Abstract: F59L1G81A F59L
Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte

F59D1G81A

Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
Contextual Info: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte

Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

F59L2G81A

Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

NAND Flash

Contextual Info: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit

Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

Contextual Info: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

NAND Flash

Abstract: F59L2G81A
Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte