8GB 64 GBIT NAND FLASH Search Results
8GB 64 GBIT NAND FLASH Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TC4011BP |
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CMOS Logic IC, 2-Input/NAND, DIP14 | Datasheet | ||
TC4093BP |
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CMOS Logic IC, 2-Input/NAND, DIP14 | Datasheet | ||
TC74HC00AP |
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CMOS Logic IC, Quad 2-Input/NAND, DIP14 | Datasheet | ||
7UL1G00NX |
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One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC | Datasheet | ||
TC7SET00F |
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One-Gate Logic(L-MOS), 2-Input/NAND, SOT-25 (SMV), -40 to 125 degC | Datasheet |
8GB 64 GBIT NAND FLASH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NAND512W3A 64MB
Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
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FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B | |
NAND512B
Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
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NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B Byte/1056 64Mbit NAND512B SD 1083 0.65mm pitch BGA NAND08G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 | |
block code error management, verilog
Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
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NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit block code error management, verilog flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63 | |
USOP48
Abstract: VFBGA63 FBGA63 NAND08GW4B
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit USOP48 VFBGA63 FBGA63 NAND08GW4B | |
qualcomm
Abstract: block diagram of qualcomm MD2433-D8G-V3Q18-X-P X-GOLD 110 arm microprocessor data sheet PCI game port 512MB NOR FLASH Infineon X-GOLD 110 OMAP 4470 datasheet infineon x-gold
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512MByte) 95-DT-1104-01 qualcomm block diagram of qualcomm MD2433-D8G-V3Q18-X-P X-GOLD 110 arm microprocessor data sheet PCI game port 512MB NOR FLASH Infineon X-GOLD 110 OMAP 4470 datasheet infineon x-gold | |
H27U4G8Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 |
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0000001WP H27U4G8 H27S4G8 ba53f20d-240c* B34416/177 | |
Wear Leveling in Single Level Cell NAND Flash Memory
Abstract: 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc
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NAND04Gx3C2A NAND08Gx3C2A Wear Leveling in Single Level Cell NAND Flash Memory 4GIT NAND08Gx3C2A NAND04GW3C2A AI07563B bad block management in mlc | |
JS29F08G08
Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
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JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 1000pc JS29F04G08BANB3 29F04G08BANB3 JS29F08G08 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand | |
block code error management, verilog
Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
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NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B | |
NUMONYX
Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
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NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A | |
JESD97
Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
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NAND04GW3B2B NAND08GW3B2A Byte/1056 JESD97 NAND04GW3B2B NAND08GW3B2A NAND04 | |
LGA52
Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
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NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models | |
F59L1G81AContextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes |
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F59L1G81A 200us F59L1G81A | |
NAND Flash
Abstract: F59L1G81A
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F59L1G81A 200us it/528 NAND Flash F59L1G81A | |
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Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59L1G81A 200us | |
1G NAND flash
Abstract: F59L1G81A F59L
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F59L1G81A 200us 1G NAND flash F59L1G81A F59L | |
Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte |
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F59L1G81MA 300us 4bit/512Byte, | |
F59D1G81A
Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
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F59D1G81A 1bit/528Byte F59D1G81A 1G NAND flash Elite Semiconductor Memory Technology nand | |
Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59D2G81A 250us | |
F59L2G81A
Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
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F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h | |
NAND FlashContextual Info: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit |
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F59D2G81A F59D2G161A 16bit NAND Flash | |
Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59L2G81A 250us | |
Contextual Info: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59D2G81A 250us | |
NAND Flash
Abstract: F59L2G81A
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F59L2G81A 350us NAND Flash F59L2G81A |