8A DIODE Search Results

gp8nc60

Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

GP8NC60KD

Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
Contextual Info: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)

gp8nc60

Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

B8NM60D

Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

sec irf840

Abstract: testing smps circuit Transistor IRF840 500V 8 TO220 CEP840N power supply IRF840 APPLICATION FQI9N50 irf840 CEF840N ssm840p FQP9N50
Contextual Info: CEP840N/CEB840N CEI840N/CEF840N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840N 500V 0.85Ω 8A 10V CEB840N 500V 0.85Ω 8A 10V CEI840N 500V 0.85Ω 8A 10V CEF840N 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

2E12

Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

Contextual Info: DOUBLEBALANCE MlX ffB DMF8A Series 500kHzto2CHz/+17 to+23cBnLO/+25 cBnTlirdQxÈr Intercept/Hatpack PRINCIPAL SPECIFICATIONS Model Number RF/LO Frequency, MHz IF Frequency, MHz Operating Range, MHz DMF-8A-250 0.5 - 500 DC - 500 DMF-8A-500 10-1000 DMF-8A-700

W9NK90Z

Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
Contextual Info: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z

AMS1508

Abstract: AMS1508CM AMS1508CT
Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATOR RoHS compliant FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 8A • Low Dropout, 500mV at 8A Output Current • Fast Transient Response

P8NM50FP

Abstract: P8NM50 JESD97 STP8NM50 STP8NM50FP
Contextual Info: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •

Contextual Info: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 100% avalanche tested

FFP08H60S

Abstract: FFP08H60STU
Contextual Info: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.

STP9NC65

Abstract: STP9NC65FP
Contextual Info: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

Contextual Info: CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

cep840g

Contextual Info: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: STP8NS25 STP8NS25FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE STP8NS25 STP8NS25FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: ^ Supertex VN22A in c . N-Channel Enhancement-Mode Vertical DMOS FETs B V dss / R DS ON Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.350 8A VN2206N3 VN2206ND 100 V 0.35H 8A VN2210N3 VN2210ND b v dgs t (max) If Ordering Information

IRF634

Abstract: IRF634FP IRF-634
Contextual Info: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3

STP8NM50

Abstract: STP8NM50FP
Contextual Info: STP8NM50 STP8NM50FP N-CHANNEL 550V @ Tjmax 0.7Ω - 8A TO-220/TO-220FP MDmesh MOSFET TYPE STP8NM50 STP8NM50FP VDSS @Tjmax RDS(on) ID 550V 550V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED