8901E Search Results
8901E Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 8408901EA |
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Quadruple D-type Flip-Flops With Clear 16-CDIP -55 to 125 |
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8901E Price and Stock
Analog Devices Inc 5962-8778901EAIC DAC 8BIT 16-CDIP |
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5962-8778901EA | Tube | 64 |
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5962-8778901EA | 1 | 1 |
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5962-8778901EA | 8,037 |
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Texas Instruments TPS7A8901EVM-853EVAL BOARD FOR TPS7A89 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPS7A8901EVM-853 | Bulk | 5 | 1 |
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TPS7A8901EVM-853 |
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TPS7A8901EVM-853 | 9,812 |
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Vishay Intertechnologies SI8901EDB-T2-E1MOSFET 2P-CH 20V 3.5A 6MICROFOOT |
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SI8901EDB-T2-E1 | Tape & Reel |
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SI8901EDB-T2-E1 | 2,985 | 1 |
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| SI8901EDB-T2-E1 | 2,330 |
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National Semiconductor Corporation 5962-8968901EAMultiplexer 1-Element 3-ST 8-IN 16-Pin CDIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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5962-8968901EA | 30 |
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Eaton Corporation T0-3-8901/EZSwitch: cam switch; Stabl.pos: 2; 20A; 0-1; for building in; Pos: 2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T0-3-8901/EZ | 1 |
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8901E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SI8901EDBContextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET |
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Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11 | |
SI8901
Abstract: J-STD-020A Si8901EDB
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Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A | |
Bi-Directional P-Channel mosfet
Abstract: SI8901 Si8901EDB
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Si8901EDB 8901E 18-Jul-08 Bi-Directional P-Channel mosfet SI8901 | |
SI8901Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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Si8901EDB 8901E Si8901EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8901 | |
SI8901
Abstract: J-STD-020A Si8901EDB MARKING G2
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Si8901EDB 8901E 08-Apr-05 SI8901 J-STD-020A MARKING G2 |