89.900 Search Results

Contextual Info: Punch-Rd 3.000 CONDUIT 739 3 Conduit Size Punch Cat No: 1431AV UPC No: 783310041801 Description 3 Conduit Size Punch Specifications • • • Application : For Standard Round Knockout Punch Unit Size : 3-1/2 IN (89.900 MM) Type : Replacement, Round

Contextual Info: DIE-RD 3.00 89,8MM CONDUIT (739) 3 Conduit Size Die Cat No: 1432AV UPC No: 783310041832 Description 3 Conduit Size Die Specifications • • Application : For 3-1/2 IN (89.900 MM) Standard Round Knockout Punch Unit Type : Replacement, Round

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

2SK2973

Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm

2SK2973

Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.

89.900

Contextual Info: FH1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +42 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +21 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years

SE 7889

Abstract: 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 NE68719 NE68730 NE68733
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

34050

Abstract: 78191 an 214 amp schematic diagram 14704E 72-6203 14921E 27514E 72284
Contextual Info: Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs ADN2817/ADN2818 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mbps to 2.7 Gbps Exceeds ITU-T jitter specifications Integrated limiting amplifier 5 mV sensitivity ADN2817 only Adjustable slice level: ±100 mV (ADN2817 only)

AN941

Abstract: 399623 4228489 WDM 201 1-66131-7
Contextual Info: Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs ADN2817/ADN2818 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mbps to 2.7 Gbps Exceeds ITU-T jitter specifications Integrated limiting amplifier 5 mV p-p sensitivity ADN2817 only

LB 11911

Abstract: 80500 TRANSISTOR mje 2055 ic 45800 KF 80500 IC 14553 60E-12 KF 80-500 9971 TRANSISTOR C 5706
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)

9249

Abstract: 9016e AN-941 1034e 4339E 8660e 8572E EVAL-ADN2817EBZ ADN2817 ADN2818
Contextual Info: Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs ADN2817/ADN2818 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mbps to 2.7 Gbps Exceeds ITU-T jitter specifications Integrated limiting amplifier 5 mV sensitivity ADN2817 only Adjustable slice level: ±100 mV (ADN2817 only)

LB 11911

Abstract: 80500 TRANSISTOR MJE 2655 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 cce 7100
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE)

Contextual Info: FH1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 42 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • 21 dBm P1dB • DC-3 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Functional Diagram

High Dynamic Range FET

Contextual Info: FH1 The Communications Edge Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +42 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +21 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years • SOT-89 SMT Package

Contextual Info: K O PUNCH 3IN. Standard Round Knockout Punches Cat No: 739BB UPC No: 783310199762 Description • • • Round standard metal punch units are complete units consisting of punch, die and draw stud Use with battery-powered, hydraulic, ratchet or manual drivers

Contextual Info: FH101 The Communications Edge Product Information High Dynamic Range FET Product Features Product Description Functional Diagram The FH101 is a high dynamic range FET pack• 50-3000 MHz Bandwidth 4 aged in a low cost surface mount package. The • +36 dBm Output IP3

Contextual Info: FH1 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 42 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • 21 dBm P1dB • DC-3 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Functional Diagram

Contextual Info: Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery ICs ADN2817/ADN2818 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mbps to 2.7 Gbps Exceeds ITU-T jitter specifications Integrated limiting amplifier 5 mV p-p sensitivity ADN2817 only

417-801

Abstract: din 71550 KEMA 02 ATEX 1096 Kema 00 atex 2121 U Kema 00 atex 2013 X aluminium alloy 6067 cenelec hd 538 KEMA 04 ATEX 2098 rz-24 relay D102A056-130
Contextual Info: 1507 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Multipole Page Automotive Specific Connectors . . . . . . . . . . . . Barrier Terminal Blocks . . . . . . . . . . . . . . . . . . . . Circular Multipole . . . . . . . . . . . . . . . . . . . . . . . . . .

FET FH1G

Abstract: 8550 SOT-89 angS21 FH1G 8050 sot 89 8050 sot89 fh1g smd FH101 FH101-G JESD22-A114
Contextual Info: FH101 The Communications Edge Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +36 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +18 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years • SOT-89 SMT Package

cce 7100

Abstract: 85500 transistor 2SC4955 NE68519-T1 2SC4959 2SC5010 2SC5015 NE685 NE68518 NE68519
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE

LB 11911

Abstract: SE 7889 85500 transistor NE687 NE68718 NE68719 NE68730 NE68733 2SC5182 mje 2055
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

Contextual Info: FH1 The Wireless Edge High Dynamic Range FET Advanced Product Information Product Features • 42 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • 21 dBm P1dB • DC-3 GHz Bandwidth • MTTF >100 Years • SOT-89 Surface Mount Package Product Description

85500 transistor

Abstract: st 85500 LM 7209 transistor d 13009 P 13009 0803 P 13009 0708 0384 80700 L 8629 lm 7803
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW C O ST • S M A LL AND U L T R A S M A LL S IZ E P A C K A G E S • LOW V O LTA G E/LO W C U R R E N T O PER A TIO N • HIGH GAIN BANDW IDTH P R O D U C T : fTof 12 GHz . N O ISE F IG U R E S O F 1.5 d B A T 2.0 GHZ