880-112 5V Search Results

"Infrared LED" 880 nm wavelength circuits

Contextual Info: Dialight 3mm Prism CBI® Infrared Emitter True Surface Mount LED 4.3 [.170] 591-7101-1xx Part No.* 591-7101-1xx CATHODE ID 6.1 [.240] 2.1 [.082] 2.8 [.112] Applications 2.8 [.112] 5.0 [.198] Configuration 880 nm IR Emitter • Control and drive circuits

socket 775 pinout

Abstract: PLCC28 package
Contextual Info: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also

AH215-S8

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 l475
Contextual Info: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

MMM6029

Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Contextual Info: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip

VTE1163H

Abstract: 880nm
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip

M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Contextual Info: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station

Contextual Info: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).

500MHz Frequency Counter Using MECL

Abstract: MC100E016 MC100E016FN MC100E016FNR2 MC10E016 MC10E016FN MC10E016FNR2 MC10H016 Presettable Counter example spice up down
Contextual Info: MC10E016, MC100E016 5VĄECL 8ĆBit Synchronous Binary Up Counter The MC10E/100E016 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the MC10H016 in the MECL 10H family, extended to 8-bits,

Contextual Info: ECP100D 1 Watt, High Linearity InGaP HBT Amplifier • +46 dBm Output IP3 • Single Positive Supply +5V • Lead-free/green/RoHS-compliant 16pin 4mm QFN package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security

Contextual Info: SINGLE OUTPUT HIGH VOLTAGE MODULES 12 HIGH POWER 8C-30C SERIES 8kV to 30kV High Voltage Cap-Charging Supplies This High Power line of high-voltage regulated DC to DC converters is an extension of the C Series, directly addressing the high power density needs of >30 watt applications. High Power 8C - 30C units

Contextual Info: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ

OD-780W

Abstract: OD-6FS S2-48V OD-20
Contextual Info: CUSTOM PRODUCTS Opto Diode’s design and manufacturing emphasis is on making LED’s and Detectors for specific customer applications. To achieve this, it is important to be flexible in terms of packaging, die sizes and shapes, and wavelengths. At the present time, our technology for emitters allows us to fabricate peak wavelengths

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

100EL90

Abstract: Application Note AND8002/D
Contextual Info: MC100EL90 −3.3V / −5V Triple ECL Input to PECL Output Translator The MC100EL90 is a triple ECL to PECL translator. The device receives either −3.3 V or −5 V differential ECL signals, determined by the VEE supply level, and translates them to standard +5 V differential PECL

Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-ED6055/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

KP63

Abstract: AND8020 MC100 MC100EP16VT 3795 8-pin
Contextual Info: MC100EP16VT 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).

MC10EP01

Contextual Info: MC10EP016, MC100EP016 3.3V / 5V ECL 8−Bit Synchronous Binary Up Counter The MC10/100EP016 is a high−speed synchronous, presettable, cascadeable 8−bit binary counter. Architecture and operation are the same as the MC10E016 in the ECLinPS family. The counter features internal feedback to TC gated by the TCLD

e 3055 t

Abstract: transistor 3055 AND8020 MC100EP16VT
Contextual Info: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination http://onsemi.com Description • • • • 8 8 1 SOIC−8 D SUFFIX CASE 751 220 ps Propagation Delay Maximum Frequency > 4 GHz Typical See Graph

Contextual Info: DRAM MODULE KMM364C80 8 3BK/BS KM M364C80(8)3 BK/BS Fast Page Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C80(8)3B consists of eight CMOS 8Mx8bits DRAMs

Contextual Info: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination http://onsemi.com Description • • • • 8 8 KEP63 ALYW G 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 TSSOP−8 DT SUFFIX CASE 948R 1 KP63 ALYWG

OD-880FHT

Abstract: OD-880LHT OD-880WHT OD880FHT
Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-880WHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .187 .156 .100 .041