88-108 MHZ POWER W Search Results

88-108

Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
Contextual Info: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

NSBP-108

Abstract: an power 88-108 mhz
Contextual Info: Connectorized NSBP-108+ NSBP-108 Band Stop Filter 88 to 108 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -55 C to 100 C -55oC to 100oC 0.5W at 25oC o o • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band

M97032

Abstract: M9703
Contextual Info: Coaxial NEW! Band Stop Filter NSBP-108 88 to 108 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band -55 C to 100 C -55oC to 100oC 0.5W at 25oC o

MW314

Abstract: MW300
Contextual Info: MW314 VCOS FOR CUSTOM APPLICATIONS SPECIFICATIONS Frequency Range: 2132 MHz @ 0.5V 2225 MHz @ 3.0V Phase Noise: @10 kHz: ≤ -88 dBc/Hz @100 kHz: ≤ -108 dBc/Hz Tuning Sensitivity: ≥ 37.2 MHz/V Spurious Response 2nd Harmonics : ≥ -18 dBc Output Power:

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

88-108 rf amplifier

Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
Contextual Info: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

blf578

Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
Contextual Info: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power

Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

4cx20000d-9015

Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
Contextual Info: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The

TP9383

Contextual Info: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. . TELEPHONE: 973 376-2922 TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE:

4CX15000A

Abstract: 4cx15000 scans-048 DSAGER00031
Contextual Info: Svetlana 4CX15000A/8281 Radial Beam Power Tetrode lie Svetlana 4C X 15000A /8281 is designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88 108 MHz frequency range. The Svetlana

FMB150

Abstract: an power 88-108 mhz ASI10588
Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

4cx20000d-9015

Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an

TP9383

Abstract: "RF Power Transistor" emitter FM RF IC fm broadcast transmitter
Contextual Info: TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE: PACKAGE STYLE 500 4L FLG • High Efficiency • Gold Metallization • Emitter Ballasting

SK300A

Abstract: 88-108 mhz Power amplifier w 4CX12
Contextual Info: SVETLANA TECHNICAL DATA 4CX12,000A/8989 Radial Beam Power Tetrode T he Svetlana 4CX12,000A/8989 is an air cooled power tetrode designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88-108 MHz frequency range and has full performance ratings to 250MHz. The Svetlana

88-108 mhz Power amplifier w

Abstract: DSAGER00032 M/KT 9019
Contextual Info: YC130/9019 Radial Beam Power Tetrode he Svetlana YC13 0 /9 0 19 is designed for use in VHF FM transmitters in the Band II 88-108 MHz frequency range. The YC130/9019 is also an excellent choice for plate-modu­ lated Class C power amplifiers or in Class AB, audio frequency applications. The

TPV3100

Abstract: TPV364 TP9380 244c-01 TP9383 TPV-3100 TPV-595A TPV3250B TPV5055B TPV385
Contextual Info: RI CHARDS ON ELECTRONICS " T -i. ijw .m ,r| n n - 2>|^Ol u. •.v 14E DI 7734ÖC|ä Q0G0Sfl2 ^ - - 7— dH T h r* t iMrr i RF Transistors tor Broadcast Applications Motorola/TRW 88-108 MHz, FM Broadcast Band Device Pout Output PowerWatts Pm Input Power

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

MRF6VP2600H

Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

MRF6VP2600H

Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

"Voltage Controlled Oscillators"

Abstract: VL800 VL700 Voltage controlled oscillators Temex vlb VL1025 VL730 VL430 VL460 VL500
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Contents TIME &FREQUENCY VOLTAGE CONTROLLED OSCILLATORS Contents PAGE SURFACE MOUNT LOW COST 430 - 2500 MHZ 3-5 SURFACE MOUNT LOW COST LOW PHASE NOISE 3-7 3-4 Vol. 2 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex-components.com

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.