860 DIODE Search Results
860 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
860 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: 820 840 860 Hand-Held DSO/DMM 20Mhz [820], 40MHz [840], 60MHz [860] bandwidths Models 840 and 860 include FFT Built in High accuracy 6000 count True RMS DMM 125KB record length for each channel 200MS/s sampling rate single channel and 100MS per |
Original |
125kb20mhz40mhz60mhz+3 | |
Fermionics Lasertech
Abstract: 910nm LCX56-860-SLD 80mA
|
Original |
lcx56-860-sld860nmlcx56-860-slds12x50+3 | |
L-7113F3C
Abstract: L-7104F3C
|
Original |
l-34f3cl-7104f3cl-7113f3cl-34f3bt+5 | |
KC82860
Abstract: Intel 8237 dma Intel 8237 dma controller ICH2 Intel 8237 P64H intel for 8237
|
Original |
kc82860intel 8237 dmaintel 8237 dma controllerich2+3 | |
P1700-1615
Abstract: kt87 KT860 KT870 KT872 dual Phototransistor side dual Phototransistor slotted SITN C-KT862 Transmissive Optical Sensor 3 pin
|
OCR Scan |
kt860/kt870p1700-1615kt87kt860+7 | |
KT860
Abstract: KT870 KT872 5 PIN JS5 IC lfr-20 Y405
|
OCR Scan |
kt860/kt870kt860kt870kt872+3 | |
PF03Contextual Info: Preliminary Data Sheet PF03, PFO4 40-860 MHz. Ultra-linear Opto Receiver Amplifier Features Ultra High Linearity with Low Noise Independent DC Supply pin for Optical diode PFO4 Model Available connectors & applicable dash #’s FC/APC - FCAPC SC/APC - SCAPC |
Original |
1300nmpf03 | |
XTHI30BF860Contextual Info: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30BF860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860 |
Original |
xthi30bf8601/100dutyxdsa2677thi/860 | |
XTHI30W860Contextual Info: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30W860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860 |
Original |
xthi30w8601/100duty30w860xdsa2676+1 | |
2596Contextual Info: Rectifier Diode SXXHN/HR860 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-2000 50 V mA 860 A 1350 A 16000 A 1280 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS |
Original |
sxxhn/hr86010000cjune-20082596 | |
c 2785Contextual Info: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C |
Original |
c 2785 | |
fluke 863
Abstract: Fluke 863 gmm Fluke 75 Multimeter IEC-1010-1 digital multimeter circuit FLUKE 75 Fluke 16 Multimeter multimeter 7217 Fluke 867B
|
Original |
iii-1000vsc860rs-232-kabelfluke 863+9 | |
|
Contextual Info: Infrared Emitting Diodes 3mm Round Q 2 *5 TNI30W GaAs Water Clear 940 1.2 1.6 TNI30BF GaAs Blue Transparent 940 1.2 1.6 THI30W GaAIAs Water Clear 880 1.3 1.6 THI30BF GaAIAs Blue Transparent 880 1.3 1.6 2 THI30W860 GaAIAs Water Clear 860 1.35 1.6 *10 THI30BF860 |
OCR Scan |
tni30wtni30bfthi30wthi30bf+4 | |
sm08 diode
Abstract: SM12CXC220 CXC220 DDD171S westinghouse overload YS100
|
OCR Scan |
d0d1715cxc220dfc2200460a+7 | |
|
|
|||
L9110
Abstract: DIODE aay 49
|
OCR Scan |
sd1492l9110diode aay 49 | |
DIODE aay 49
Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
|
Original |
sd1660diode aay 49100mf 63vge diode+4 | |
|
Contextual Info: SKS 1270F B6U 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 950 1420 A 870 1740 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase controlled |
Original |
1270fp16/300f | |
SLD-850-DIP
Abstract: Fermionics Lasertech SLD-850 high power 850nm ld DIODE 35
|
Original |
sld-850-dip850nmsld-860-dips120ma+4 | |
DIODE 4005
Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
|
Original |
sd1660diode 4005diode aay 49100b choke+3 | |
toshiba c660Contextual Info: TOSHIBA TMP47C660N, TMP47C860N TMP47C660DF, TMP47C860DF CMOS 4—Bit Microcontroller The 47C660/860 have extended I/O ports and A/D converter based on the TLCS-470 series. TM P47C660N, TMP47C860N TMP47C660DF, TMP47C860DF OTP Piggyback S D IP 4 2 TM P47P860N |
OCR Scan |
tmp47c660ntmp47c860ntmp47c660dftmp47c860df+4 | |
DIODE REDRESSEMENT herrmann
Abstract: DIODE REDRESSEMENT REDRESSEMENT Herrmann diode k6 Diodes de redressement
|
OCR Scan |
443b27sdiode redressement herrmanndiode redressementredressement+3 | |
TMP47P1660VContextual Info: TOSHIBA TMP47C1260/1660 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F , TMP47C1660F The 47C1260/1660 are the high speed and high performance 4-bit single chip microcomputer, w ith large capacity ROM and RAM, based on the 47C660/860 TLCS-470 series . |
OCR Scan |
tmp47c1260/1660tmp47c1260ntmp47c1660ntmp47c1260f+5 | |
push pull class AB RF linear
Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
|
Original |
sd1492push pull class ab rf linearr767box63b+3 | |
Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
|
Original |
p-100n-1500n-2200germanium itt+9 | |