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    860 DIODE Search Results

    860 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    860 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 820 840 860 Hand-Held DSO/DMM ࡯ 20Mhz [820], 40MHz [840], 60MHz [860] bandwidths ࡯ Models 840 and 860 include FFT ࡯ Built in High accuracy 6000 count True RMS DMM ࡯ 125KB record length for each channel ࡯ 200MS/s sampling rate single channel and 100MS per


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    125kb20mhz40mhz60mhz+3200ms/s100ms100ms/s PDF

    Fermionics Lasertech

    Abstract: 910nm LCX56-860-SLD 80mA
    Contextual Info: Fermionics Lasertech, Inc. Fiber Optic Light Sources PART NUMBER LCX56-860-SLD 860nm Superluminescent Diode DESCRIPTION LCX56-860-SLDs are superluminescent diodes developed as light sources for use in the fields of optical measurement and communications. The diode is packaged in a 5.6mm or 9mm TO package


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    lcx56-860-sld860nmlcx56-860-slds12x50+3fermionics lasertech910nm80ma PDF

    L-7113F3C

    Abstract: L-7104F3C
    Contextual Info: INFRARED EMITTING DIODES L-34F3C Part No. L-7104F3C Material λP nm Lens Type GaAs 940 water clear L-34F3BT GaAs 940 blue transparent L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-34SF7BT GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs 880 880 860 860 850 850 Po (mW/sr)


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    l-34f3cl-7104f3cl-7113f3cl-34f3bt+5l-34sf4cl-34sf4btl-34sf6cl-34sf6btl-34sf7c PDF

    KC82860

    Abstract: Intel 8237 dma Intel 8237 dma controller ICH2 Intel 8237 P64H intel for 8237
    Contextual Info: R Intel 860 Chipset: 82860 Memory Controller Hub MCH Specification Update May 2001 Notice: The Intel 860 chipset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.


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    kc82860intel 8237 dmaintel 8237 dma controllerich2+3intel 8237p64hintel for 8237 PDF

    P1700-1615

    Abstract: kt87 KT860 KT870 KT872 dual Phototransistor side dual Phototransistor slotted SITN C-KT862 Transmissive Optical Sensor 3 pin
    Contextual Info: 860 00061 6798580 OPTEK TECHNOLOGY INC OP TE K T E C H N O L O G Y Üt INC D »E | t 7 1 S S 8 D ' OOQODkl OPTEK SLOTTED OPTICAL SWITCHES PHOTOTRANSISTOR OUTPUT Optek Technology, Inc. 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461 KT 860/870/880/890 SERIES


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    kt860/kt870p1700-1615kt87kt860+7kt870kt872dual phototransistor sidedual phototransistor slottedsitnc-kt862transmissive optical sensor 3 pin PDF

    KT860

    Abstract: KT870 KT872 5 PIN JS5 IC lfr-20 Y405
    Contextual Info: 6 7 9 8 5 8 0 OPTEK TECHNOLOGY OPTEK TECHNOLOGY 860 INC INC lib 0 0061 D DE IbTTÖSfiD ' 000DDL.1 OPTEK SLO TTED O P T IC A L SW ITCH ES PH O TO TRA N SISTO R OUTPUT Optek Technology, Inc. 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461 KT 860/870/880/890 SERIES


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    kt860/kt870kt860kt870kt872+35 pin js5 iclfr-20y405 PDF

    PF03

    Contextual Info: Preliminary Data Sheet PF03, PFO4 40-860 MHz. Ultra-linear Opto Receiver Amplifier Features Ultra High Linearity with Low Noise Independent DC Supply pin for Optical diode PFO4 Model Available connectors & applicable dash #’s FC/APC - FCAPC SC/APC - SCAPC


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    1300nmpf03 PDF

    XTHI30BF860

    Contextual Info: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30BF860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860


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    xthi30bf8601/100dutyxdsa2677thi/860 PDF

    XTHI30W860

    Contextual Info: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30W860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860


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    xthi30w8601/100duty30w860xdsa2676+1thi/860 PDF

    2596

    Contextual Info: Rectifier Diode SXXHN/HR860 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-2000 50 V mA 860 A 1350 A 16000 A 1280 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS


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    sxxhn/hr86010000cjune-20082596 PDF

    c 2785

    Contextual Info: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C


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    c 2785 PDF

    fluke 863

    Abstract: Fluke 863 gmm Fluke 75 Multimeter IEC-1010-1 digital multimeter circuit FLUKE 75 Fluke 16 Multimeter multimeter 7217 Fluke 867B
    Contextual Info: Serie 860 Graphical Multimeter Leistungsfähige Multimeter mit Graphik- und Protokollierungsmöglichkeiten Neu Echteffektiv CAT III-1000V Leistungsmerkmale 863 867B 32.000 32.000 Echteffektivwert-Messungen ● ● AutoDiode™ ● ● Hochohmiger Eingang


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    iii-1000vsc860rs-232-kabelfluke 863+9fluke 863 gmmfluke 75 multimeteriec-1010-1digital multimeter circuitfluke 75fluke 16 multimetermultimeter7217fluke 867b PDF

    Contextual Info: Infrared Emitting Diodes 3mm Round Q 2 *5 TNI30W GaAs Water Clear 940 1.2 1.6 TNI30BF GaAs Blue Transparent 940 1.2 1.6 THI30W GaAIAs Water Clear 880 1.3 1.6 THI30BF GaAIAs Blue Transparent 880 1.3 1.6 2 THI30W860 GaAIAs Water Clear 860 1.35 1.6 *10 THI30BF860


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    tni30wtni30bfthi30wthi30bf+4thi30w860thi30bf860thi30w850thi30bf850 PDF

    sm08 diode

    Abstract: SM12CXC220 CXC220 DDD171S westinghouse overload YS100
    Contextual Info: ' 34 9709955 WESTCODE DEl^TtmSS SEM ICONDUCTORS 34C 01712 D 7 ^ 0 / - 2-3 D0 Q171 5 b I \ Technical Publication WESTCODE ® SEMICONDUCTORS DFC220 Issue 1 February 1981 Fast Recovery Capsule Diode Type CXC220 860 amperes average: up to 1600 volts V RRM R atings


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    d0d1715cxc220dfc2200460a+71000-2000kgf200absm08 diodesm12cxc220ddd171swestinghouse overloadys100 PDF

    L9110

    Abstract: DIODE aay 49
    Contextual Info: /T T SGS-THOMSON ^7# SD1492 RF & MICROWAVE TRANSISTO RS _ TV/LINEAR APPLICATIONS • . ■ . . ■ . ■ . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS


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    sd1492l9110diode aay 49 PDF

    DIODE aay 49

    Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
    Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


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    sd1660diode aay 49100mf 63vge diode+4diode l19aay49m175si diode PDF

    Contextual Info: SKS 1270F B6U 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 950 1420 A 870 1740 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase controlled


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    1270fp16/300f PDF

    SLD-850-DIP

    Abstract: Fermionics Lasertech SLD-850 high power 850nm ld DIODE 35
    Contextual Info: Fermionics Lasertech, Inc. Fiber Optic Light Sources PART NUMBER SLD-850-DIP 850nm Superluminescent Diode DESCRIPTION SLD-860-DIPs are high powered superluminescent diodes with low coherence for fiber-optic gyro and other sensing applications. The diode is packaged in a 14 pin DIP with a thermo-electric cooler.


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    sld-850-dip850nmsld-860-dips120ma+4fermionics lasertechsld-850high power 850nm lddiode 35 PDF

    DIODE 4005

    Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
    Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


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    sd1660diode 4005diode aay 49100b choke+3m175aay49ge diode PDF

    toshiba c660

    Contextual Info: TOSHIBA TMP47C660N, TMP47C860N TMP47C660DF, TMP47C860DF CMOS 4—Bit Microcontroller The 47C660/860 have extended I/O ports and A/D converter based on the TLCS-470 series. TM P47C660N, TMP47C860N TMP47C660DF, TMP47C860DF OTP Piggyback S D IP 4 2 TM P47P860N


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    tmp47c660ntmp47c860ntmp47c660dftmp47c860df+447c660/860tlcs-470p47c660ntoshiba c660 PDF

    DIODE REDRESSEMENT herrmann

    Abstract: DIODE REDRESSEMENT REDRESSEMENT Herrmann diode k6 Diodes de redressement
    Contextual Info: f HERRNANN T- O I '2 3 KG ^^3^275 QOOOOTO 3 •HRHN Dioden, Avalanche-Dioden Rectifier Diodes, Avalanche Diodes Diodes de redressement, Diodes avalanche Diodentyp Type of diode Type de diode . HD 400/04-1 06 V V A A 430 860 6800 231200 60 450 707 7750 300000


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    443b27sdiode redressement herrmanndiode redressementredressement+3herrmanndiode k6diodes de redressement PDF

    TMP47P1660V

    Contextual Info: TOSHIBA TMP47C1260/1660 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F , TMP47C1660F The 47C1260/1660 are the high speed and high performance 4-bit single chip microcomputer, w ith large capacity ROM and RAM, based on the 47C660/860 TLCS-470 series .


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    tmp47c1260/1660tmp47c1260ntmp47c1660ntmp47c1260f+5tmp47c1660f47c1260/166047c660/860tlcs-470tmp47p1660v PDF

    push pull class AB RF linear

    Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
    Contextual Info: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN


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    sd1492push pull class ab rf linearr767box63b+3400sm175ge diode PDF

    Germanium itt

    Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
    Contextual Info: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470


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    p-100n-1500n-2200germanium itt+9thyratron pl 21mallory vibrator data booknational electronics ignitronsbat cr li mn lab test resulthelipot potentiometerbendix transistorsselenium rectifier westinghouse5000w audio amplifier6cl6 PDF