85UH Search Results

Contextual Info: 1. M echanical D im ensions: 3. E lectrical Specification s: 25°C OCL: 85uH Min 100KHz 100mV 1.115 Max DCR: 0.300 Ohms Max, Each Wdg ro o ¡N ë COMMON MODE ATTENUATION: 300KHz 0.030- 1MHz 0.004 Mirr 0.025 M a^ 0.950 m. x X a XFMRS YYWW a a o to to d

MIL-STD-2020

Abstract: XF0856ABE XF0856AB XF0856
Contextual Info: 1. M e c h a n i c a l D im e n s i o n s : — 0.51 3. E l e c t r i c a l Max — -| $ X k f t f f t r U Jh0.030 — 1 I— 0.016 5 0 0 VAC Turns Ratio: 1:1 d J OCL: 85uH ±20% @100KHz 50m V T CO o o Q Ó cl -H C w /w : 10pF Maximum @100KHz 50m V PRI/SEC

20AWG

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t ic : 1 o25 Turns #20AWG T 6 8 -2 B D 3. E l e c t r i c a l S p e c if ic a t io n s : Inductance: 85uH ±30% @50KHz, 1V DC Resistance: .029 Ohms Mox C urrent Rating; 0.30 Ade Max ART MARKINGS 0 .025

XF0856

Abstract: XF0856AB
Contextual Info: 1. M e c h a n i c a l D im e n s io n a : 3. E l e c t r i c a l - — 0.51 Max — - Isolation Voltage: o q o x CJ •S? O Û 4 ir S p e c i f i c a t i o n s : @ 2 5 <>C 5 0 0 VAC Turns Ratio: 1:1 5L L I 0 .0 3 0 — I I— 0 .0 1 6 OCL: 85uH ±20% 100K H z 50m V

china tv

Abstract: 340uH
Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance uH TMP50035AT 85uH+/-10% TMP50036AT 340uH min Part No. Rated Current 0.45ADC 1.0ADC DCR Ohms max 0.08 0.102 Inductane measured @10kHz,0.1V. .32 .650 FEATURES: 1 REF. REF. Flyline style 2 APPLICATIONS: Switch power supply, TV, MNT, other 3C inductries.

Contextual Info: ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power

amplifier 9v a 500v

Abstract: amplifier 500v
Contextual Info: ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

Contextual Info: PD-94968B IRF1404PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 0.004Ω G ID = 202A† S Description

SUMITOMO NS12

Abstract: OSC127100A-125-3.3-TS T375J E59481 E165111 sumitomo epoxy am-113 Kikusui* tos8650
Contextual Info: December 2013 Transformers for Switching Power Supplies Pin terminal type For multiple outputs ECO series ECO20XXSEO(Vertical/Horizontal types) ECO22XXSEO(Vertical/Horizontal types) ECO24XXSEO(Vertical/Horizontal types) ECO24XXSLD(Vertical/Horizontal types)

ARF460A

Abstract: ARF460B VK200-4B ARF460
Contextual Info: ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

40.68mhz

Abstract: ARF461C VK200-4B
Contextual Info: ARF461C G ARF461D(G) TO -24 7 Common Drain RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461C and ARF461D comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

40.68mhz

Abstract: 40.68MHz power amplifier ARF460AG ARF460A ARF460B VK200-4B RF MOSFET CLASS AB amplifier 9v a 500v
Contextual Info: ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power

1-10v interface and Application Note, D

Abstract: ptc 884 1-10v interface OSRAM DULUX d ICB2FL02G dali schematic ptc osram ballast B32922C3224M000 1-10V dimmable ballast BYG22D
Contextual Info: Application Note, Rev. 1.0, August 2009 ICB2FL02G Smart Ballast Control IC for Flourescent Lamp Ballasts Dimming Demoboard 26W TC-TEL Single Lamp Design www.infineon.com/smartlighting Edition 2009-08-07 Published by Infineon Technologies AG 81726 Munich, Germany

AUIRF1404

Contextual Info: PD-97684 AUTOMOTIVE GRADE AUIRF1404 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

AN10739

Abstract: pnp transistor 313 smd inductor 1612 footprint dimension LED driver INDUCTOR smd schottky diode sot363 SOT363 flash BC847BPN LQH55D PBSS5220T PMEG2010EJ
Contextual Info: AN10739 Discrete LED driver Rev. 2 — 21 June 2010 Application note Document information Info Content Keywords LED, constant current source, buck converter Abstract This application note describes a 300 mA discrete LED driver, based on a buck-converter principle, with a cycle-by-cycle current control. It includes a