85DEG. Search Results

sanyo OS-CON sepc

Abstract: 35SVPD22M 35SVPD18M sanyo sepc 35SVPD8R2M sanyo oscon sepc series
Contextual Info: Series Aluminum solid capacitors with Conductive polymer Rated voltage 35V : High withstand voltage 125deg.C guarantee : High enduarance * Endurance : 125deg.C x WV x 1,000Hr * Damp heat : 85deg.C x 85% x WV x 1,000Hr SEPC Series Characteristics List Size code

35SVPD47M

Abstract: 25SVPD22M 25SVPD82M 25SVPD47M sanyo os-con capacitors date code 10SVPD56M 16SVPD82M 25SVPD10M 25SVPD39M 35SVPD18M
Contextual Info: '04 - 12 Series Aluminum solid capacitors with Conductive polymer High voltage : Rated Voltage 35V High enduarance : 125deg.C guarantee * Lead free * Endurance : 125deg.C x RV x 2,000h * Damp heat : 85deg.C x 85% x RV x 1,000h Introducing additional models highlighted in red

MF-2500

Abstract: IC for IR receiver mitsubishi receiver STM-16 V-16 V162 MF-2500SRA-XXXXX MF-2500SRB-XXXXX mitsubishi optical transmitter receiver L16.2
Contextual Info: MITSUBISHI TQ9-98-232D 1/17 Sep.20 1999 2nd Generation SDH /SONET integrated module Multi-Source STM-16 / OC-48 Features: 1. Full SONET/SDH line up 2. Low cost 3. Compact, low power 4. +5V single power supply, DC/DC converter built in for Rx 5. Case Temp. Range: Class 1;-5 to +75deg.C / Class 2;-40 to +85deg.C

SCP6G

Contextual Info: Specification: TS-S08D192A February, 2009 Technical specification for Small Form Factor Pluggable SFP OC-3 (155.52Mbps) Sumitomo Part Number Function SCP6G11-GL-# W E LR-1, 1310nm, 40km SCP6G61-GL-# W E LR-2, 1550nm, 80km Sumitomo Electric reserves the right to make changes in this specification without prior notice.

Contextual Info: Preliminary ES/SMM5141XZ 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

ML720J35S

Abstract: ML720K35S ML725B35F ML725C35F ML7XX35
Contextual Info: MITSUBISHI LASER DIODES ML7XX35 SERIES InGaAsP - MQW - FP LASER DIODES TYPE NAME ML720J35S , ML720K35S ML725B35F , ML725C35F DESCRIPTION FEATURES ML7XX35 series are InGaAsP laser diodes which provides a stable, single transverse mode oscillation with emission

ML925B45F

Abstract: ML9XX45 laser 1550 spectral ML920J45S ML920K45S ML920Y45S ML925C45F 1520nm ingaasp 1550 laser diode DSA002250
Contextual Info: MITSUBISHI LASER DIODES PRELIMINARY ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES Notice: Some parametric limits are subject to change TYPE NAME ML920J45S , ML920K45S,ML920Y45S ML925B45F , ML925C45F DESCRIPTION FEATURES •1550 or 1520nm typical emission wavelength, FP-LDs

Contextual Info: ES/SMM5141XZ Preliminary 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

AN0017

Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
Contextual Info: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from

SHS-M0

Abstract: Hitachi DSA002699
Contextual Info: HS-SHS-M085TJ-0406A Antenna Switch Module for Triple Band Phone GSM(850/900 /DCS/PCS) Model No. SHS-M085TJ 2. Logic & Current 1. Measurement Circuit Top View GSM(850/900)_TX (Tx1) ANT GSM(850/900)_RX (Rx1) VC1 33p 33n 11 10 9 8 7 12 VC1 2.6V 0V 0V 0V 0V VC2 VC3 Current

EIAJ ED-4701-1

Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
Contextual Info: [3] 東芝半導体製品の品質･信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する

Contextual Info: ISOLATED DC/DC CONVERTERS • • • • • • • 18 Vdc - 36 Vdc Input 12 Vdc /10 A, 3.3 Vdc/30 A 0RCY-80Rxxx RoHS Compliant Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Input Under-Voltage Lockout Output Over-Voltage Shutdown

Contextual Info: ISOLATED DC/DC CONVERTERS • • • • • • • 18 Vdc - 75 Vdc Input 3.3 Vdc /15 A Output 0RCY-60U03x RoHS Compliant • • • • • • • • Isolated High Efficiency High Power Density Fixed Frequency 260 kHz Input Under-Voltage Lockout Input Over-Voltage Lockout

CSTCR4M00G55-R0

Abstract: TC74HCU04
Contextual Info: 1 Evaluation Data of CERALOCK Oscillation Circuit Technical Data of Ceramic Resonator MURATA Part No.: CSTCR4M00G55-R0 Applied to R5F36C0MDFB High Compatibility Information Ceramic resonator is compatible to : CSTCR4M00G55Z-R0 Temperature range :-40 to +125[deg.C]

Contextual Info: ES/SMM5143XZ Preliminary 24 – 30GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +24dBm

39E2527A

Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

VCTCXO 19.2 MHz

Contextual Info: Ultra miniature and High-precision SMD TCXO Miniature and High-precision SMD VC-TCXO DSB221SDA/DSB221SDB DSA321SDA for GPS / Industrial Radio system Features 2520 size, 0.8mm high. Ultra miniature and high-precision SMD TCXO 0.0045cc・0.02g ● Low voltage. Supply voltage up to ＋1.7~＋3.6V.

SMD 5 PIN CODE E4

Abstract: SMD E4 5 pin
Contextual Info: SMD VC-TCXO/TCXO DSA321SC/DSB321SC for Mobile communications Features 3225 size, 0.9 mm high miniature SMD VC-TCXO/TCXO 0.008cc, 0.03g ● Wide operating voltage range. Supply voltage range ＋2.3 to ＋5.5V ● Low phase noise ● Single packaged structure

26mhz 3225

Contextual Info: SMD VC-TCXO/TCXO〈For Automotive〉 DSA321SF/DSB321SF for Automotive Applications Features NEW ● ● ● ● ● ● 3225 size, 0.9 mm high miniature SMD VC-TCXO/TCXO 0.008cc, 0.03g Capable of operating over a wide temperature range, from –40℃ to 105℃.

OD-J8670-0A01

Abstract: OD-J8670-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM STM-16
Contextual Info: OE HYBRID 2.48832Gbps Transmitter OD-J8670-0A01/0B01 OC-48: IR-1/LR-1 STM-16: S-16.1/L-16.1 1 Copyright C 1994-2001 NEC Corporation 7th September 2001 Rev. 0.1, Preliminary - Contents 1. PRODUCT

HA01

Abstract: OD-J6860-0A01 OD-J6860-HA01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM OD-S524-MU-SM
Contextual Info: OE HYBRID 622.08Mbps Transmitter OD-J6860-0A01/ HA01 OC-12: SR and IR-1 STM-4: I-4 and S-4.1 1 Copyright C 1994-2001 NEC Corporation 11 t h September, 2001 Rev.6 - Contents 1. PRODUCT

HBT 01 05

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM31CB30J476K

Abstract: MGFS38E2325 RPC03T
Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: ISOLATED DC/DC CONVERTERS 18 Vdc - 36 Vdc Input 12 Vdc /10 A, 3.3 Vdc/30 A Outputs 0RCY-80Rxxx RoHS Compliant PRELIMINARY Rev. D • • • • • • • Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Input Under-Voltage Lockout Output Over-Voltage Shutdown