85DEF Search Results

514165

Contextual Info: CC568 1213 1456789A58B5C99DE7FE8  !1"14 345#F$578A 555553555 5!515"5155 6A$EA 55535%5"EA55B8$5&AA$FD5DE&E&4 69A7EFD59A7EBE7FE8 555 5%5'AA$FD58D8$5 AA$E&5 A*5945+59A4

Contextual Info: CC5645 1213 1456789A58B5C99DE7FE8  !"#$14 45%F578A 55555 5!5555"55#5$5155 6AEA 5555 !5&5$EA598'A55B85 AAFD5DE(E(4 69A7EFD59A7EBE7FE8

Contextual Info: 1 B9C7DEF3 1 AAAAAAAA $%A5AA E D65E91E69D7EEF5D4E E9EEF5D5487CE E 77E 7!86"94E E E E E E E E A AAAAAAAAAAB&A '  ##3 EA A 6A DC*A FC+DA ,-76.FA ,6D67/8A .CA 7,6D67/8A .

AC1435CF4J19.1 94E

Abstract: bf776 91E64
Contextual Info: 1 B9C7DEF3 1 AAAAAAAA $%A3AAA E D65E91E69D7EEF5D 4E !E9E!EF5D5487CE E E 7"86#94E E E E E E E E A AAAAAAAAAAB&A ' #   3*EA A 6A DC+A FC,DA -.76/FA -6D6708A /CA 

Contextual Info: CC5635 1213 1456789A58B5C99DE7FE8  !"#14 45$F578A 55555 5!555"55#55155 6AEA 5555 !5%5&EA598'A55B85 AAFD5DE(E(4 69A7EFD59A7EBE7FE8

RFP12N06RLE

Abstract: RFD12N06RLE RFD12N06RLESM kos30
Contextual Info: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE

Contextual Info: CC56/ 1213 1456789A58B5C99DE7FE8  !"#14 45$F578A 55555 5!55555"5#5155 6AEA 5555 !5%5&EA598'A55B85 AAFD5DE(E(4 &F57DF 5555"5%5"5'F59F7 F(A4

PF08109B

Abstract: ic PF08109B PF08109B-TB PMM Bd-5701 j131 TCA 345 pf08109 h9908010n8 samsung Lot Code Identification ASQC-21
Contextual Info: SPECIFICATION *lo. SAMSUNG ELECTRONICS Co.Ltd. H9908010NS 9 Sep. 1999 Issue Date. Revised Date. 12 Nov. 1999 REV. 1 Cut No. 3,2 T h is d o c u m e n t is re v is e d . P le a s e re tu rn th is d o c u m e n t w ith y o u r a p p ro v al s ig n a tu re b y