84193 Search Results

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

6502 microprocessor

Contextual Info: ANALOG DEVICES FEATURES AN Grades 14-Bit Monotonic Over the Full Temperatu n Rang* FuM4-Quadrant Multiplication Mteroprocoesor-Compatible with Double Buffered inputs Exceptionally Low Gain Tamparatui« Coefficient, 0.5ppm/*C typ Small 20-Pin DIP and Surface Mount Package

FZK101

Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974

VEMD11940FX01

Contextual Info: VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with

Contextual Info: MP23AB02B MEMS audio sensor high-performance analog bottom-port microphone Datasheet - production data Description The MP23AB02B is a compact, low-power microphone built with a low-profile sensing element. The sensing element, capable of detecting acoustic waves, is manufactured using a

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

db3 c605

Abstract: AD7534JN AD7534JP c605 db3 AD7534 AD7534KN AD7534KP P-20A 6502 microprocessor z80 microprocessor
Contextual Info: LC2M0S pP-Compatible 14-Bit DAC AD7534 ANALOG DEVICES FEATURES AN Gredes 14-Bit Monotonic Over the Full Temperatun Rang* FuM 4-Quadrant Multiplication Mteroproceesor-Compatible with Double Buff«rad inputs Exceptionally Low Gain Temperature Coefficient 0.5ppm/*C typ

Contextual Info: MP23AB02B MEMS audio sensor high-performance analog bottom-port microphone Datasheet - production data Description The MP23AB02B is a compact, low-power microphone built with a low-profile sensing element. The sensing element, capable of detecting acoustic waves, is manufactured using a

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Contextual Info: VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

1336-WB035

Abstract: 1336-MOD-KB005 1321-3RB400-B 1336-WB110 dynamic brake bulletin 1336 1336-WB110 manual circuit 1336-MOD-KB050 20S-RFC AC drives regenerative braking circuits 1200 kVA, 690V transformers
Contextual Info: Common DC Bus Selection Guide Common DC Bus Applications Introduction Contents Overview this page Typical Common DC Bus Configuration this page Non-Regen Bus Supplies 3 Line Regeneration Solutions 8 Choppers & Dynamic Brakes 15 DC Input Drives 21 Power Components