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    Panasonic Electronic Components 35SVPF120M

    Aluminum Organic Polymer Capacitors 35 V 120uF ESR 18mohm
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    TTI 35SVPF120M Reel 3,600 400
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    Panasonic Electronic Components 35SEPF120M+T

    Aluminum Organic Polymer Capacitors 35volts 120uF ESR 18mohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 35SEPF120M+T Ammo Pack 1,000 500
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    Panasonic Electronic Components 35SVF120M

    Aluminum Organic Polymer Capacitors 120uf 35volts 4.4A OS-CON Polymer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 35SVF120M Reel 800 400
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    Nichicon Corporation LGU1K102MELZ

    Aluminum Electrolytic Capacitors - Snap In 80volts 1000uF 105c
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI LGU1K102MELZ Bulk 600 25
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    • 1000 $1.33
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    Panasonic Electronic Components 35SEPF120M

    Aluminum Organic Polymer Capacitors 35volts 120uF ESR 18mohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 35SEPF120M Bulk 400 200
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    • 10000 $1.36
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    840UA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GP01

    Abstract: TR-332 GP401 avalanche photodiodes
    Contextual Info: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series INPUT CURRENT NO LOAD INPUT CURRENT (FULL LOAD) OUTPUT *3 VOLTAGE OUTPUT*2 CURRENT GP01 <45mA <150mA 0 to +/-100V 10mA <0.75% GP02 <45mA <150mA 0 to +/-200V


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    150ma/-100v/-200v125ma+7/-300v/-500v/-600vgp01tr-332gp401avalanche photodiodes PDF

    mdt10p621

    Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high


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    mdt10p621n16-bitomdt10p621n4kx14+2192x8mdt10p621 PDF

    Contextual Info: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    mdt10p72n16-bit2kx14128x8 PDF

    MDT10P62

    Abstract: MDT10P
    Contextual Info: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and


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    mdt10p6216-bitmdt10p128x8 PDF

    20MHZ

    Abstract: 100nnn
    Contextual Info: MDT10P621N AB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    mdt10p621nportb7420mhz200ns+34kx14192x8100nnn PDF

    MDT10P72

    Abstract: DC MOTOR SPEED CONTROLLER
    Contextual Info: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    mdt10p7216-bit128x8dc motor speed controller PDF

    MDT10P721

    Abstract: 20MHZ
    Contextual Info: MDT10P721 BB 1. 概述 -A/D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    mdt10p721portb7420mhz200ns+1192x8 PDF

    Contextual Info: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and


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    mdt10p62n16-bit2kx14128x8 PDF

    MDT10P621

    Abstract: MDT10P
    Contextual Info: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip


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    mdt10p62116-bit192x8mdt10p PDF

    20MHZ

    Abstract: MDT10P62 MDT10P
    Contextual Info: MDT10P62 BB .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器


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    mdt10p6220mhz200nsportb74+2mdt10p128x8 PDF

    000-3FF

    Abstract: MDT10C55B
    Contextual Info: MDT10C55B 1. General Description Power-on Reset Power edge-detector Reset This ROM-Based 8-bit micro-controller uses a fully Sleep Mode for power saving static CMOS technology process to achieve higher 5 types of oscillator can be selected by speed programming option:


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    mdt10c55b000-3ff PDF

    MDT10P716

    Abstract: 200NS
    Contextual Info: MDT10P716 1概述: 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计,集高速、体积小、低功耗和高抗干扰 性一体的芯片。内存包括 2K 字节的 ROM 和 128 字节静态 RAM。 2、特点: RC-低价 RC 振荡器


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    mdt10p71620mhz200nstmr116+3tmr2820-pin18-pin PDF

    Contextual Info: MDT10P721N AB -PortB<7:4> interrupt on change 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


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    mdt10p721n16-bitoscil21n4kx14+1192x8 PDF

    000-3FF

    Abstract: 200NS 20MHZ 20MS MDT10C55B
    Contextual Info: MDT10C55B 1.概述 电源边沿检测复位(PED) 这是一个 8 位基于 ROM 的微控制器,是由完全的静态 CMOS 睡眠低功耗模式 技术设计,集高速体积小、低功耗和高抗噪声一体的芯片, 5 种可选的振荡类型:


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    mdt10c55b20ms40ms80m20mhz200ns+6mdt10c55b1p/mdt10c55b1smdt10c55b3p/mdt10c55b3smdt10c55b2p/mdt10c55b2s-20ma000-3ff20ms PDF

    EMI photomultiplier

    Abstract: Ignition Transformer GP01 GP02 GP03 GP05 GP08 GP10 GP15 EMCO High Voltage Corporation
    Contextual Info: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series INPUT CURRENT NO LOAD INPUT CURRENT (FULL LOAD) GP01 <45mA GP02 OUTPUT VOLTAGE OUTPUT CURRENT <150mA 0 to 100V 10mA <0.75% <45mA <150mA 0 to 200V 5mA <1.75%


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    150ma125ma840uaemi photomultiplier+9ignition transformergp01gp02gp03gp05gp08gp10gp15emco high voltage corporation PDF

    EMI photomultiplier

    Abstract: 340ua Ignition Transformer GP01 TR-332 EMCO High Voltage EMCO High Voltage Corporation emco gp06
    Contextual Info: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series 3 in FEATURES OPTIONS External Mounting Box, See AB Series Epoxy: A. Low Outgassing NASA approved per ASTM E-595-93 B. UL 94 V0 flammability rating RoHS(- ‘R’ suffix denotes the product is designed to meet RoHS requirements i.e GP01R)


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    100vdc000vdc4728uemi photomultiplier+7340uaignition transformergp01tr-332emco high voltageemco high voltage corporationemco gp06 PDF

    MB96F613

    Abstract: MB96F612 MB96F610
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00007-0v03-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96610 Series MB96F612/F613/F615* DESCRIPTION MB96610 series is based on FUJITSU’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus


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    ds704-00007-0v03-e16-bitmc-16fxmb96610+4mb96f612/f613/f615mb96f613mb96f612mb96f610 PDF

    20MHZ

    Contextual Info: MDT10P72N AB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 -A/D 转换完成


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    mdt10p72nportb7420mhz200ns+12kx14 PDF

    20MHZ

    Abstract: 84uA
    Contextual Info: MDT10P721N AB 1. 概述 -A/D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    mdt10p721nportb7420mhz200ns+3pc1/t104kx1484ua PDF

    MDT10P721

    Contextual Info: MDT10P721 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    mdt10p72116-bit192x8 PDF

    MDT10P621

    Abstract: MDT10P 20MHZ 4KX14
    Contextual Info: MDT10P621 BB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    mdt10p621portb7420mhz200ns+4specificat14mdt10p192x84kx14 PDF

    20MHZ

    Abstract: MDT10P72
    Contextual Info: MDT10P72 BB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 -A/D 转换完成


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    mdt10p72portb7420mhz200ns+1128x8 PDF

    000-3FF

    Abstract: 200NS MDT10P712
    Contextual Info: MDT10P712 1概述: 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计,集高速、体积小、低功耗和高抗干扰 性一体的芯片。内存包括 4K 字节的 ROM 和 192 字节静态 RAM。 RC-低价 RC 振荡器 LFXT-低频晶体振荡器


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    mdt10p71220mhz200nstmr116+4tmr2820-pin18-pin000-3ff PDF

    MDT10P716

    Contextual Info: MDT10P716 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 2K words of ROM, and 128


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    mdt10p71616-bit-20ma PDF