826 SOT23 Search Results

826 SOT23

Contextual Info: Application Note 826 Vishay Siliconix 0.049 1.245 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE

Siliconix

Abstract: ON TSOP-6 MARKING 6L PowerPAK 1212-8 PowerPAK SO-8 SC70-6L SC-75 SC75-6L SC-75A SC-89 Vishay PowerPAIR MOSFETs
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs BY KANDARP PANDYA This web-smart document offers the following features: a. Click on any package type listed under the “Package” column to go to the corresponding minimum recommended pad pattern

ON TSOP-6 MARKING 6L

Abstract: SOT-923 PowerPAIR 3 x 3 part marking
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note 826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs By Kandarp Pandya This web-smart document offers the following features: a. Click on any package type listed under the “Package” column to go to the corresponding minimum recommended pad pattern

vishay so-8 pin dimensions

Abstract: 0119 PowerPAK SO-8 SC-70-6 Dual SC70-6L SC-75 SC75-6L SC-75A SC-89
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 826 Recommended Minimum Pad Patterns with Outline Drawing Access for Vishay Siliconix MOSFETs BY KANDARP PANDYA This Web-smart document offers the following features: a Click on any package type listed under the “Package” column to go to the corresponding Minimum Recommended Pad

Contextual Info: Section 8 Package Information TO-92 . 8-3 TO-92, TO-18 Lead Form Standard . 8-7

pj 809

Contextual Info: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS

leadframe materials

Abstract: AN807 AN-807 siliconix an807
Contextual Info: AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices.

sot 23 marking code

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

4406 mosfet

Abstract: MAX6394 MAX6394US mosfet 4423 transistor C 2240 MAX639-4 transistor K 2937
Contextual Info: 19-3202; Rev 0; 1/08 High-Accuracy µP Reset Circuit The MAX6394 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. It offers excellent circuit reliability by providing 1% accurate thresholds over

SOT-23 marking a8

Abstract: Si2308DS
Contextual Info: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V

Contextual Info: ACE3401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE3401B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general

Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

marking 7E SOT-23 Diode

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

SOT-23 marking A9

Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Contextual Info: Si2328DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 100 0.250 at VGS = 10 V 1.5 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

Contextual Info: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS

Contextual Info: Si2323DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.039 at VGS = - 4.5 V - 4.7 - 20 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236

Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Si2308DS

Contextual Info: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V