81133 Search Results

9985 agilent

Abstract: agilent 9985 81134A N4871A versa max nano & micro Micro yig oscillator 5988-9591EN
Contextual Info: Agilent Technologies 81133A and 81134A 3.35 GHz Pulse Pattern Generators Data Sheet Key features Figure 1: 81134A 81133A and 81134A 3.35 GHz Pulse Pattern Generators The need for pulse and pattern generation is fundamental to digital device characterization

Contextual Info: Agilent 81133A and 81134A 3.35 GHz Pulse Pattern Generators Data Sheet Version 1.3 81133A and 81134A 3,35 GHz Pulse Pattern Generators The need for pulse and pattern generation is fundamental to digital device characterization tasks. The ability to emulate the pulse

Contextual Info: Data Sheet February 1995 ^A T& T Microelectronics JW050B, JW075B, JW100B, JW150B Power Modules: dc-dc Converters; 36 Vdc to 72 Vdc Input; 50 W to 150 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 87% typical

Contextual Info: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability

JC075H

Abstract: JC050H JC050H1 JC075H1 JC100H JC100H1 UL-1950
Contextual Info: Data Sheet October 1997 JC050H, JC075H, JC100H Power Modules: dc-dc Converters; 18 to 36 Vdc Input, 24 Vdc Output; 50 W to 100 W Features • Small size: 61.0 mm x 57.9 mm x 13.1 mm 2.40 in. x 2.28 in. x 0.52 in. ■ High power density ■ High efficiency: 86% typical

T163VU

Abstract: FVOV6870 MIL-HDBK-263 81133
Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage

JW100B1

Abstract: JW050B JW075B JW100B JW150B
Contextual Info: Data Sheet April 2008 JW050B, JW075B, JW100B, JW150B Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 12 Vdc Output; 50 W to 150 W Features n The JW050B, JW075B, JW100B, and JW150B Power Modules use advanced, surface-mount technology and deliver highquality, efficient, and compact dc-dc conversion.

1gb usb flash drive circuit diagram sandisk

Abstract: seagate sata hard drive circuit diagram seagate sata CIRCUIT diagram MSEBX945-E4 PBQ Batteries power supply 12v 15amp diagram header 3x2 GB11 V01C hard disk serial ATA
Contextual Info: Detailed USER MANUAL FOR: EBX Based on the SmartModuleExpress945 SMX945 MSEBX945 Nordstrasse 11/F CH - 4542 Luterbach Tel.: +41 (0)32 681 58 00 Fax: +41 (0)32 681 58 01 Email: support@digitallogic.com Homepage: http://www.digitallogic.com DIGITAL-LOGIC AG

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

49FCT3805D

Abstract: oa1 transistor AN-236 IDT49FCT3805D AN 6754 8600A IDT49FCT3805 HP81 HP81130A
Contextual Info: APPLICATION NOTE AN-236 49FCT3805D JITTER PERFORMANCE APPLICATION NOTE AN-236 49FCT3805D JITTER PERFORMANCE SUMMARY The 49FCT3805D is composed of two banks, A and B. Each bank has five outputs and its own output enable control. The purpose of this test is to observe the jitter when different frequencies are

Contextual Info: Data Sheet March 996 J ^ A T s T Microelectronics JW050B, JW075B, JW100B, JW150B Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 50 W to 150 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 87% typical

FMVSS302

Abstract: 8113 1200372 FMVSS-302
Contextual Info: POLYFLEX , PA 6 normal profile conduit Connector* Conduit Locknut* without sealing O-Ring* Sealing Ring* Clamping Clip* with sealing ring and O-Ring Enclosure* Material: • Polyamide 6 Upper temperature range: • Short-term: 150°C, 302°F Characteristics:

Contextual Info: Data Sheet April 2008 JW050B, JW075B, JW100B, JW150B Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 12 Vdc Output; 50 W to 150 W Features n The JW050B, JW075B, JW100B, and JW150B Power Modules use advanced, surface-mount technology and deliver highquality, efficient, and compact dc-dc conversion.

Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage

672047

Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16
Contextual Info: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a first class European supplier of low-voltage products including wiring devices, residential and

80GN01C

Abstract: 14049 ce 2826 ic
Contextual Info: 80GN01C 注文コード No. N 8 1 1 3 三洋半導体データシート N 80GN01C NPN エピタキシァルプレーナ形シリコントランジスタ UHF低雑音広帯域増幅用 特長 ・しゃ断周波数が高い：fT=8.0GHz typ。 ・高利得である

ic 8853

Abstract: 2052-16 "Frequency Converter"
Contextual Info: ALPHABETICAL INDEX A c c e s s o ry K it s . 194, 229-231 Attenuation Measurement Kit P/N 187-4001 . 194 SWR Accessory Kit (P/N 187-4003) . 230-231

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

ATT Microelectronics

Abstract: 044EPS jw100b1
Contextual Info: Data Sheet March 1996 = A T s T ^ ^ ^ M ic ro e le c tro n ic s JW050B, JW075B, JW100B, JW150B Power Modules: dc-dc Converters; 36 Vdc to 75 Vdc Input; 50 W to 150 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ High power density ■ High efficiency: 87% typical

Contextual Info: Flat Packing, Neoprene Material: • Neoprene, black Connecting thread Characteristics: • PG and metric thread Temperature Range -25 to 100°C -13 to 212°F External diameter mm Internal diameter mm Thickness mm Cat. No. Std. Pk. PG PG 7 PG 9 PG 11 PG 13.5

TEFABLOC

Abstract: DIN 46320 DIN VDE 470, DIN EN 60529, IEC 529 pg21 cable gland BRASS 11x34 kerosine Santoprene 70 shore A 4220351 NBR 70
Contextual Info: Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . . . . . . .5 Flathead and Multi Conductor Sealing Inserts . . . . . . . . . . . . . . . . . . . . .6

Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage

Contextual Info: Infiniium DCA-X 86100D Wide-Bandwidth Oscilloscope Mainframe and Modules Data Sheet Table of Contents Overview of the Infiniium 86100D DCA-X .2 Specifications .3 General and Mainframe .3

Contextual Info: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability