81 210 W 28 Search Results

81 210 W

Abstract: 81 210 w 12 enclosure 7023R
Contextual Info: Series 1 (Series 1) 3R/4/12 Painted 3R/4/12 Painted w/Cntl. Trans. 4/4X Stainless 4/4X Stainless w/Cntl. Trans. 3R/4/12 Painted 3R/4/12 Painted w/Cntl. Trans. 4/4X Stainless 4/4X Stainless w/Cntl. Trans. (Series 1) 81/4 101/2 (267) 271/2 (698) (210) 251/8

Contextual Info: 16 15 14 13 12 9 10 1 1 8 Ï 6 7 5 4 DWG STATUS MISSING NUMBERS DATE STG REV CHG 12-21, 28JN99 R 001 — SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER 3 TOTAL NO. OF SYMBOLS

RBS 2216 specifications

Abstract: MIL-T-16366 K975 RBS 2216 Maintenance manual UL 486A pull test K974 RBS 6600 STA-KON LUG str f 6655 WT2130A
Contextual Info: 412031.K01 STAKON 3/5 3/14/03 10:28 AM Page 1 Terminal Products and Tools Terminals Overview .K2-K5 Nylon Insulated Ring.K6-K10 Vinyl Insulated Ring.K11-K12, K18

Contextual Info: PHOTOMULTIPLIER TUBES R3788, R4332 High Sensitivity, Bialkali Photocathode 28 mm 1-1/8 Inch Diameter, 9-Stage, Side-On Type FEATURES ●Wide Spectral Response R3788 . 185 nm to 750 nm R4332 . 160 nm to 750 nm

FL 210 transistor

Abstract: LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w
Contextual Info: = - = -’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz LF2805A Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation

transistor c 2499

Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

ZWS300

Contextual Info: ZWS300 NEMIC-LAMBDA SPECIFICATIONS A177-01-01-C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODEL ITEMS Nominal Output Voltage Maximum Output Current Convection Maximum Output Current(Forced air) Maximum Peak Output Current

top 258 mn

Abstract: PA-QFE304SA-P-S-01
Contextual Info: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 A 301 303 300 299 294 289 284 279 274 269 265 263 258 253 248 243 238 233 235 229 225 B C D E F G H J K K M N 1 2 304 302 297 292 287 282 277 272 266 261 256 251 246 241 236 231 232 230 227 7 4 228 224

J5021-0

Abstract: 1200W MOSFET power J50 mosfet
Contextual Info: an A M P co m p a n y RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120T V2.00 Features • • • • • N -Channel E n han cem en t M ode D evice DM OS Structure Low er C ap acitan ces for B roadb an d O p eration High Saturated O u tp u t Pow er

DVD150T

Abstract: DV2810S DV2810W DV2805S DV2805W DV2805Z DV2810Z DV2820S DV2820W DV2820Z
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

AM-140

Abstract: AMC-140
Contextual Info: a/7 A M P com pany High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 V2.00 FP-9 Features • +47 dBm Typical Midband Third O rder Intercept • +28 dBm Typical Midband 1 dB Compression • 5.4 dB Typical Midband Noise Figure 1.130 ±0.015 28.7 ±0.4

Contextual Info: Æ a n A M P com pany High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 FP-9 Features • +4? dBm Typical M idband Third O rder Intercept • +28 dBm Typical M idband 1 dB Com pression • 5.4 dB Typical M idband Noise Figure ¡1 : NTT- Guaranteed Specifications*

AMC-138

Abstract: AM-138
Contextual Info: M a n A M P ,c o m p a n y High Performance Amplifiers, 25 dB Gain 5 - 200 MHz AM-/AMC-138 V2.00 Features 1.130 1 0.015 - 28.7 t 0.4 FP-9 • +49 dBm Typical Midband Third Order Intercept • +29 dBm Typical Midband 1 dB Compression • 5.3 dB Typical Midband Noise Figure

Contextual Info: 2 3 A 5 4 6 x X Lochb i Id Kontaktanordnung board d r i l l i n g s c o n ta c t arrangement a l l holes 32 28 30 _a — c I Re ihe •t-t-f0,1 32 s o ld e r contacts p o sitio n 01 ± 0,1 00,05 + 32 E i nl o t K o n t a k t e 2 — Pos i t ion on alle Locher

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

XZ 142

Abstract: D-H7B
Contextual Info: Zubehör Zylinder ISO 6431 Accessories Cylinders ISO 6431 Schwenklager Swivel Bearing Female swivel bearing with bolt CD Schwenklager mit Bolzen MR CS L US XD+ Bestell-Nr./Order No. Ø CS US L XD CD MR 18.001.01 32 26 45 12 142 10 11 18.001.02 40 28 52 15

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

sp 0937

Abstract: VK200 inductor of high frequencies Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

731 MOSFET

Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

Contextual Info: PSR, PSK PSL series • • • • • • • • • • • • O utpu t power 50.288 W Extremely wide input voltage range Power MOS-FET technology Large number o f options providing unlimited applications Low input to output differential voltage D irect replacement o f linear regulators

SU 179 transistor

Abstract: SU 179
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

Contextual Info: Interface Mating Dim ensions .4375-28, UNEF-2B I I I I jy _ n SEE NOTE 81 Tp n N 0 r .4376-28, UNEF-2A L REFERENCE PLANE JACK PLUS h m .< M lrm » * r.‘ . Lkta r •- i k A r m ^ ’ IS *n W ^440 11.1 • .318 (6.06 .190 (4.63) .064(1.37) .062 (1.32)